Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Number of Circuits | Supplier Device Package | Output Characteristics | Logic Function | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Time Format | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Reverse Pinout | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
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71342LA25PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Bulk | 2009 | 64 | EAR99 | 85°C | -40°C | 5V | 2 | RoHS Compliant | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 32 kb | CMOS | 1 | QUAD | GULL WING | 5V | INDUSTRIAL | YES | 0.8mm | SRAMs | 5V | 2 | 3-STATE | 25 ns | 4kB | RAM, SRAM | 24b | 4KX8 | 8 | 8b | 0.0015A | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61WV3216BLL-12TLI-TR | ISSI, Integrated Silicon Solution Inc | 0.7016 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | Active | 2 (1 Year) | 85°C | -40°C | 3.3V | 1 | ROHS3 Compliant | 44 | 44-TSOP (0.400, 10.16mm Width) | Parallel | 3.6V | 3V | 512 kb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 5mA | 44-TSOP II | 12ns | 512Kb 32K x 16 | Volatile | 15b | 3V~3.6V | Asynchronous | 16b | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT49H32M18SJ-18:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | Tray | 2015 | Obsolete | 3 (168 Hours) | 144 | 1.8V | 1 | 18.5mm | ROHS3 Compliant | 144 | AUTO REFRESH | 144-TFBGA | unknown | 576 Mb | Surface Mount | 0°C~95°C TC | CMOS | SYNCHRONOUS | 1.2mm | 1 | 533.33MHz | BOTTOM | 1.8V | YES | 1mm | 1.7V | 1.9V | 15ns | 576Mb 32M x 18 | Volatile | 20b | 1.7V~1.9V | 32MX18 | 18 | 533MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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11AA040-I/TO | Microchip Technology | 0.2946 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Bulk | 2009 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Tin | 3 | TO-226-3, TO-92-3 (TO-226AA) | Serial | 4 kb | Through Hole | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | 5mA | e3 | BOTTOM | NOT SPECIFIED | 5V | NOT SPECIFIED | 11AA040 | 3 | 1.27mm | 1.8V | Not Qualified | 2/5V | 5.5V | 4Kb 512 x 8 | Non-Volatile | 1.8V~5.5V | 512X8 | 8 | 100kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 10ms | 1-WIRE | EEPROM | Single Wire | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W632GU6KB12I | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2003 | Discontinued | 3 (168 Hours) | 96 | EAR99 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-TFBGA | 9mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 8542.32.00.36 | 1 | BOTTOM | NOT SPECIFIED | 1.35V | NOT SPECIFIED | 96 | YES | 0.8mm | R-PBGA-B96 | 1.283V | Not Qualified | 1.35V | 1.45V | 3-STATE | 20ns | 2Gb 128M x 16 | Volatile | 0.38mA | 1.283V~1.45V | 128MX16 | 16 | 2147483648 bit | 800MHz | 0.019A | COMMON | 8192 | DRAM | Parallel | 8 | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14B104LA-ZS20XI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Surface Mount | Tube | 2011 | yes | Active | 3 (168 Hours) | 44 | 3A991.B.2.B | 3V | 18.415mm | ROHS3 Compliant | Gold, Tin | No | 44 | 44-TSOP (0.400, 10.16mm Width) | 4 Mb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | 1.194mm | 8542.32.00.41 | 1 | 70mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3V | 30 | CY14B104 | 44 | 0.8mm | 2.7V | SRAMs | 3.6V | 4Mb 512K x 8 | Non-Volatile | 2.7V~3.6V | 512KX8 | 8 | 8b | 0.005A | 20 ns | 8b | NVSRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V9369L12PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 288 kb | 33.3MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 205mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 25 ns | RAM, SRAM | 14b | 16KX18 | Synchronous | 0.005A | 18b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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3138321 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29E512G08CKCCBH7-6:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 152-TBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | 512Gb 64G x 8 | Non-Volatile | 2.7V~3.6V | 167MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V321L35JG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | yes | Active | 1 (Unlimited) | 52 | EAR99 | 70°C | 0°C | 3.3V | 2 | 19mm | RoHS Compliant | Lead Free | No | 52 | PLCC | Parallel | 3.6V | 3V | 16 kb | 19mm | 3.63mm | CMOS | 1 | 95mA | e3 | Matte Tin (Sn) - annealed | QUAD | 260 | 3.3V | 30 | 52 | COMMERCIAL | 35 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V3577YS80PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V3577 | 8ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M29W640GT60ZA6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2013 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 8mm | ROHS3 Compliant | No | 48 | TOP BOOT BLOCK | 48-TFBGA | 64 Mb | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | M29W640 | 48 | YES | 0.8mm | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 0.02mA | 2.7V~3.6V | 4MX16 | 16 | 0.0001A | 60 ns | 8 | YES | YES | YES | 8127 | 4/8words | YES | YES | FLASH | Parallel | 60ns | 8K64K | TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS7C34096A-12JIN | Alliance Memory, Inc. | 3.7581 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tube | 2001 | Active | 3 (168 Hours) | 85°C | -40°C | 3.3V | 1 | 23.62mm | ROHS3 Compliant | Lead Free | No | 36 | 36-BSOJ (0.400, 10.16mm Width) | Parallel | 3.6V | No SVHC | 3V | 4 Mb | 2.95mm | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 36-SOJ | 12ns | 4Mb 512K x 8 | Volatile | 19b | 3V~3.6V | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS1230Y-200+ | Maxim Integrated | 23.9814 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Through Hole | Tube | 2002 | yes | Active | 1 (Unlimited) | 28 | Through Hole | EAR99 | 5V | 39.37mm | ROHS3 Compliant | Lead Free | No | 28 | 28-DIP Module (0.600, 15.24mm) | Unknown | 256 kb | 200GHz | 9.35mm | 18.8mm | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 85mA | 8473.30.11.40 | 1 | 85mA | e3 | MATTE TIN | DUAL | 5V | DS1230Y | 28 | 2.54mm | SRAMs | 5V | 256Kb 32K x 8 | Non-Volatile | 15b | 4.5V~5.5V | 32KX8 | 8b | 0.0006A | 200 ns | NVSRAM | Parallel | 200ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1382D-167AXCT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2004 | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | 20mm | ROHS3 Compliant | Lead Free | PIPELINED ARCHITECTURE | 100-LQFP | unknown | 14mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.6mm | 8542.32.00.41 | 1 | e4 | NICKEL PALLADIUM GOLD | QUAD | 3.3V | CY7C1382 | 100 | YES | 0.65mm | R-PQFP-G100 | 3.135V | Not Qualified | 3.6V | 3.4ns | 18Mb 1M x 18 | Volatile | 3.135V~3.6V | 1MX18 | 18 | 18874368 bit | 167MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14B104M-ZSP25XI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tray | 2005 | Active | 3 (168 Hours) | 54 | 3A991.B.2.A | 3.3V | 22.415mm | ROHS3 Compliant | Tin | 54 | 54-TSOP (0.400, 10.16mm Width) | 4 Mb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 1.2mm | 1 | 70mA | e3 | DUAL | 260 | 3V | 30 | CY14B104 | 54 | 0.8mm | 2.7V | SRAMs | Not Qualified | 3.6V | Clock | 4Mb 256K x 16 | Non-Volatile | 2.7V~3.6V | 256KX16 | 16 | HH:MM:SS | 16b | 0.005A | 25 ns | 16b | NVSRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53D384M64D4NZ-053 WT:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 24Gb 384M x 64 | Volatile | 1.1V | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SST26VF016BEUIT-104I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 8 | 4.89mm | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.68mm | 1 | DUAL | 3V | YES | 1.27mm | R-PDSO-C48 | 2.7V | 3.6V | 16Mb 2M x 8 | Non-Volatile | 0.025mA | 2.7V~3.6V | 2MX8 | 8 | 16777216 bit | SERIAL | 104MHz | 0.000025A | 100 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | SPI | NO | FLASH | SPI - Quad I/O | 1.5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CP6759DM | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FT24C04A-UMR-B | Fremont Micro Devices Ltd | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | 2010 | Active | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 2-Wire, I2C, Serial | 1MHz | Surface Mount | -40°C~85°C | EEPROM | 8-MSOP | 550ns | 4Kb 512 x 8 | Non-Volatile | 1.8V~5.5V | 1MHz | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CG8442AA | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Last Time Buy | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43LD16128B-18BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 134 | 1 | 11.5mm | ROHS3 Compliant | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 134-TFBGA | 10mm | Surface Mount | -40°C~85°C TC | SDRAM - Mobile LPDDR2-S4 | SYNCHRONOUS | 1.1mm | 1 | BOTTOM | NOT SPECIFIED | 1.2V | NOT SPECIFIED | YES | 0.65mm | R-PBGA-B134 | 1.14V | 1.3V | 2Gb 128M x 16 | Volatile | 1.14V~1.95V | 128MX16 | 16 | 2147483648 bit | 533MHz | MULTI BANK PAGE BURST | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT24C02AN-10SC-1.8 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | 0°C~70°C TA | EEPROM | AT24C02 | 8-SOIC | 900ns | 2Kb 256 x 8 | Non-Volatile | 1.8V~5.5V | 400kHz | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71T75902S85BGGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | 85°C | -40°C | RoHS Compliant | BGA | Parallel | RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CY7C131E-25JXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tube | 2011 | Obsolete | 3 (168 Hours) | 5V | 2 | ROHS3 Compliant | Lead Free | No | 52 | 52-LCC (J-Lead) | 8 kb | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 170mA | CY7C131 | 8Kb 1K x 8 | Volatile | 20b | 4.5V~5.5V | Asynchronous | 8b | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS4C256M16D3-12BCN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | 2014 | Discontinued | 3 (168 Hours) | 96 | EAR99 | 1.5V | 1 | 13mm | ROHS3 Compliant | Lead Free | 96 | AUTO/SELF REFRESH | 96-TFBGA | 4 Gb | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | 8542.32.00.36 | 1 | BOTTOM | NOT SPECIFIED | 1.5V | NOT SPECIFIED | YES | 0.8mm | 1.425V | 1.575V | 20ns | 4Gb 256M x 16 | Volatile | 15b | 1.425V~1.575V | 256MX16 | 16 | 800MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V9099L9PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 1 Mb | 40MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 230mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 9 ns | 128kB | RAM, SDR, SRAM | 34b | Synchronous | 8b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MB85R256GPF-G-BND-ERE1 | Fujitsu Electronics America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | -40°C~85°C TA | FRAM (Ferroelectric RAM) | 256Kb 32K x 8 | Non-Volatile | 2.7V~3.6V | FRAM | Parallel | 150ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62167GE30-45ZXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | 2011 | MoBL® | yes | Active | 3 (168 Hours) | 48 | 3A991.B.2.A | 18.4mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 8542.32.00.41 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | CY62167 | YES | 0.5mm | R-PDSO-G48 | 2.2V | 3.6V | 16Mb 2M x 8 1M x 16 | Volatile | 2.2V~3.6V | 1MX16 | 16 | 16777216 bit | 45 ns | 8 | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT24C128C-CUM-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2012 | Active | 3 (168 Hours) | 8 | 3.73mm | ROHS3 Compliant | No | 8 | 8-VFBGA, DSBGA | 2-Wire, Serial | 128 kb | 2.35mm | Surface Mount | -40°C~85°C TA | CMOS | 1mm | 1 | 400kHz | e1 | TIN SILVER COPPER | BOTTOM | 260 | 2.5V | 40 | AT24C128C | YES | 0.75mm | 1.7V | 5.5V | 550ns | 128Kb 16K x 8 | Non-Volatile | 0.003mA | 1.7V~5.5V | 8 | 1MHz | 0.000001A | 40 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms |
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IS61WV3216BLL-12TLI-TR ISSI, Integrated Silicon Solution Inc
Surface Mount Memory IC 512 kb kb 5mA mA 16b b
Price: 0.7016
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11AA040-I/TO Microchip Technology
2/5V V Through Hole 3 Pin Memory IC 11AA040 4 kb kb 5mA mA
Price: 0.2946
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CY14B104LA-ZS20XI Cypress Semiconductor Corp
Surface Mount 44 Pin Memory IC CY14B104 4 Mb kb 18.415mm mm 70mA mA 8b b
Price: 0.0000
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70V9369L12PF8 Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 288 kb kb 14mm mm 205mA mA 18b b
Price: 0.0000
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71V321L35JG Integrated Device Technology (IDT)
Surface Mount 52 Pin Memory IC 16 kb kb 19mm mm 95mA mA 8b b
Price: 0.0000
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M29W640GT60ZA6E Micron Technology Inc.
3/3.3V V 48 Pin Memory IC M29W640 64 Mb kb 8mm mm
Price: 0.0000
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DS1230Y-200+ Maxim Integrated
5V V Through Hole 28 Pin Memory IC DS1230Y 256 kb kb 39.37mm mm 85mA mA
Price: 23.9814
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CY14B104M-ZSP25XI Cypress Semiconductor Corp
Surface Mount 54 Pin Memory IC CY14B104 4 Mb kb 22.415mm mm 70mA mA 16b b
Price: 0.0000
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CY7C131E-25JXC Cypress Semiconductor Corp
Surface Mount Memory IC CY7C131 8 kb kb 170mA mA 8b b
Price: 0.0000
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70V9099L9PF8 Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 1 Mb kb 14mm mm 230mA mA 8b b
Price: 0.0000
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CY62167GE30-45ZXI Cypress Semiconductor Corp
MoBL® Memory IC MoBL® Series CY62167 18.4mm mm
Price: 0.0000
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