Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Number of Circuits | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
70V3389S6BF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 3 (168 Hours) | Non-RoHS Compliant | 208-LFBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V3389 | 208-CABGA (15x15) | 6ns | 1.125Mb 64K x 18 | Volatile | 3.15V~3.45V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
71256L85DB | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | 28-CDIP (0.600, 15.24mm) | Through Hole | -55°C~125°C TA | SRAM - Asynchronous | 28-CerDip | 85ns | 256Kb 32K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 85ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
70V35S25PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 3.6V | 3V | 144 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 190mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 25 ns | 18kB | RAM, SDR, SRAM | 26b | 8KX18 | Asynchronous | 0.005A | 18b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT53B256M64D2NK-053 WT ES:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 16Gb 256M x 64 | Volatile | 1.1V | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
CAT28C256L12 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2007 | Obsolete | 1 (Unlimited) | 28 | EAR99 | 5V | 36.695mm | RoHS Compliant | Lead Free | 28 | 28-DIP (0.600, 15.24mm) | 256 kb | 15.24mm | Through Hole | 0°C~70°C TA | CMOS | ASYNCHRONOUS | 5.08mm | 8542.32.00.51 | 1 | 30mA | e3 | Tin (Sn) | DUAL | 260 | 5V | 40 | CAT28C256 | 28 | 2.54mm | Not Qualified | 5V | 120ns | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 32KX8 | 8 | 0.00015A | 100000 Write/Erase Cycles | 5ms | 5V | YES | YES | NO | 64words | EEPROM | Parallel | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
93AA86AT-I/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | Serial | 16 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.1mm | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 260 | 2.5V | 40 | 93AA86A | 8 | 0.65mm | 5.5V | 16Kb 2K x 8 | Non-Volatile | 1.8V~5.5V | 512X16 | 16 | 3MHz | 8 | 5ms | MICROWIRE | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
71T75602S133BG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | Non-RoHS Compliant | 119-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71T75 | 119-PBGA (14x22) | 4.2ns | 18Mb 512K x 36 | Volatile | 2.375V~2.625V | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
AT24C32A-10PI-2.7 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | -40°C~85°C TA | EEPROM | AT24C32 | 8-PDIP | 900ns | 32Kb 4K x 8 | Non-Volatile | 2.7V~5.5V | 400kHz | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT29F1G08ABAEAWP-ITX:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Surface Mount | Tray | 2013 | Active | 3 (168 Hours) | 85°C | -40°C | 3.3V | ROHS3 Compliant | 48 | 48-TFSOP (0.724, 18.40mm Width) | Parallel | 3.6V | 2.7V | 1 Gb | Surface Mount | -40°C~85°C TA | FLASH - NAND | 35mA | MT29F1G08 | 48-TSOP I | 1Gb 128M x 8 | Non-Volatile | 28b | 2.7V~3.6V | Asynchronous | 8b | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT29F2G01ABBGD12-AATES:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 24-TBGA | Surface Mount | -40°C~105°C TA | FLASH - NAND (SLC) | 2Gb 2G x 1 | Non-Volatile | 1.7V~1.95V | 83MHz | FLASH | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61DDP2B22M18A-400M3L | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | 17mm | ROHS3 Compliant | 165 | 165-LBGA | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR IIP | 1.4mm | 8542.32.00.41 | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | 165 | YES | 1mm | 1.71V | 1.89V | 36Mb 2M x 18 | Volatile | 1.71V~1.89V | 2MX18 | 18 | 37748736 bit | 400MHz | 0.45 ns | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14V256LA-BA35XI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Surface Mount | Tray | 2009 | yes | Active | 3 (168 Hours) | 48 | 3A991.B.2.A | 3.3V | 10mm | ROHS3 Compliant | Copper, Silver, Tin | 48 | 48-TFBGA | 256 kb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | 30 | CY14V256 | 0.75mm | 3V | SRAMs | Not Qualified | 3.6V | 256Kb 32K x 8 | Non-Volatile | 0.06mA | 2.7V~3.6V | 32KX8 | 8 | 8b | 0.008A | 35 ns | 8b | NVSRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT29F2G08ABBEAHC-IT:E TR | Micron Technology Inc. | 3.7868 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Tape & Reel (TR) | 2013 | Active | 3 (168 Hours) | 63 | 13mm | ROHS3 Compliant | 63-VFBGA | 10.5mm | Surface Mount | -40°C~85°C TA | FLASH - NAND | ASYNCHRONOUS | 1mm | 1 | e1 | TIN SILVER COPPER | BOTTOM | 1.8V | MT29F2G08 | 63 | YES | 0.8mm | R-PBGA-B63 | 1.7V | 1.95V | 2Gb 256M x 8 | Non-Volatile | 1.7V~1.95V | 256MX8 | 8 | 2147483648 bit | 1.8V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
CB015-80142 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
M58LR128KT85ZB6F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2008 | Active | 3 (168 Hours) | ROHS3 Compliant | 56-VFBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | M58LR128 | 128Mb 8M x 16 | Non-Volatile | 1.7V~2V | 66MHz | FLASH | Parallel | 85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MTFC8GLVEA-1M WT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2013 | e•MMC™ | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 153-WFBGA | Surface Mount | -25°C~85°C TA | FLASH - NAND | 8542.31.00.01 | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL256S90FHSS40 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | GL-S | Active | 3 (168 Hours) | ROHS3 Compliant | 64 | 64-LBGA | Surface Mount | 0°C~85°C TA | FLASH - NOR | 90ns | 256Mb 16M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
M24C32-XDW5TP | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | ACTIVE (Last Updated: 7 months ago) | Tape & Reel (TR) | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 32 kb | 3mm | Surface Mount | -20°C~85°C TA | CMOS | 1.2mm | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | M24C32 | YES | 0.65mm | 1.6V | 5.5V | 450ns | 32Kb 4K x 8 | Non-Volatile | 0.003mA | 1.6V~5.5V | 8 | 1MHz | 0.000001A | 200 | 4000000 Write/Erase Cycles | HARDWARE | 10ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
71342LA25PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Bulk | 2009 | 64 | EAR99 | 85°C | -40°C | 5V | 2 | RoHS Compliant | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 32 kb | CMOS | 1 | QUAD | GULL WING | 5V | INDUSTRIAL | YES | 0.8mm | SRAMs | 5V | 2 | 3-STATE | 25 ns | 4kB | RAM, SRAM | 24b | 4KX8 | 8 | 8b | 0.0015A | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61WV3216BLL-12TLI-TR | ISSI, Integrated Silicon Solution Inc | 0.7016 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | Active | 2 (1 Year) | 85°C | -40°C | 3.3V | 1 | ROHS3 Compliant | 44 | 44-TSOP (0.400, 10.16mm Width) | Parallel | 3.6V | 3V | 512 kb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 5mA | 44-TSOP II | 12ns | 512Kb 32K x 16 | Volatile | 15b | 3V~3.6V | Asynchronous | 16b | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT49H32M18SJ-18:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | Tray | 2015 | Obsolete | 3 (168 Hours) | 144 | 1.8V | 1 | 18.5mm | ROHS3 Compliant | 144 | AUTO REFRESH | 144-TFBGA | unknown | 576 Mb | Surface Mount | 0°C~95°C TC | CMOS | SYNCHRONOUS | 1.2mm | 1 | 533.33MHz | BOTTOM | 1.8V | YES | 1mm | 1.7V | 1.9V | 15ns | 576Mb 32M x 18 | Volatile | 20b | 1.7V~1.9V | 32MX18 | 18 | 533MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
11AA040-I/TO | Microchip Technology | 0.2946 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Bulk | 2009 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Tin | 3 | TO-226-3, TO-92-3 (TO-226AA) | Serial | 4 kb | Through Hole | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | 5mA | e3 | BOTTOM | NOT SPECIFIED | 5V | NOT SPECIFIED | 11AA040 | 3 | 1.27mm | 1.8V | Not Qualified | 2/5V | 5.5V | 4Kb 512 x 8 | Non-Volatile | 1.8V~5.5V | 512X8 | 8 | 100kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 10ms | 1-WIRE | EEPROM | Single Wire | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
W632GU6KB12I | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2003 | Discontinued | 3 (168 Hours) | 96 | EAR99 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-TFBGA | 9mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 8542.32.00.36 | 1 | BOTTOM | NOT SPECIFIED | 1.35V | NOT SPECIFIED | 96 | YES | 0.8mm | R-PBGA-B96 | 1.283V | Not Qualified | 1.35V | 1.45V | 3-STATE | 20ns | 2Gb 128M x 16 | Volatile | 0.38mA | 1.283V~1.45V | 128MX16 | 16 | 2147483648 bit | 800MHz | 0.019A | COMMON | 8192 | DRAM | Parallel | 8 | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14B104LA-ZS20XI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Surface Mount | Tube | 2011 | yes | Active | 3 (168 Hours) | 44 | 3A991.B.2.B | 3V | 18.415mm | ROHS3 Compliant | Gold, Tin | No | 44 | 44-TSOP (0.400, 10.16mm Width) | 4 Mb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | 1.194mm | 8542.32.00.41 | 1 | 70mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3V | 30 | CY14B104 | 44 | 0.8mm | 2.7V | SRAMs | 3.6V | 4Mb 512K x 8 | Non-Volatile | 2.7V~3.6V | 512KX8 | 8 | 8b | 0.005A | 20 ns | 8b | NVSRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
70V9369L12PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 288 kb | 33.3MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 205mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 25 ns | RAM, SRAM | 14b | 16KX18 | Synchronous | 0.005A | 18b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
3138321 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT29E512G08CKCCBH7-6:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 152-TBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | 512Gb 64G x 8 | Non-Volatile | 2.7V~3.6V | 167MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
71V321L35JG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | yes | Active | 1 (Unlimited) | 52 | EAR99 | 70°C | 0°C | 3.3V | 2 | 19mm | RoHS Compliant | Lead Free | No | 52 | PLCC | Parallel | 3.6V | 3V | 16 kb | 19mm | 3.63mm | CMOS | 1 | 95mA | e3 | Matte Tin (Sn) - annealed | QUAD | 260 | 3.3V | 30 | 52 | COMMERCIAL | 35 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
IDT71V3577YS80PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V3577 | 8ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
M29W640GT60ZA6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2013 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 8mm | ROHS3 Compliant | No | 48 | TOP BOOT BLOCK | 48-TFBGA | 64 Mb | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | M29W640 | 48 | YES | 0.8mm | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 0.02mA | 2.7V~3.6V | 4MX16 | 16 | 0.0001A | 60 ns | 8 | YES | YES | YES | 8127 | 4/8words | YES | YES | FLASH | Parallel | 60ns | 8K64K | TOP |
-
-
-
70V35S25PF Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 144 kb kb 14mm mm 190mA mA 18b b
Price: 0.0000
RFQ -
-
CAT28C256L12 ON Semiconductor
5V V Through Hole 28 Pin Memory IC CAT28C256 256 kb kb 36.695mm mm 30mA mA
Price: 0.0000
RFQ -
93AA86AT-I/ST Microchip Technology
Surface Mount 8 Pin Memory IC 93AA86A 16 kb kb 4.4mm mm 3mA mA
Price: 0.0000
RFQ -
-
-
MT29F1G08ABAEAWP-ITX:E Micron Technology Inc.
Surface Mount Memory IC MT29F1G08 1 Gb kb 35mA mA 8b b
Price: 0.0000
RFQ -
MT29F2G01ABBGD12-AATES:G Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
Price: 0.0000
RFQ -
IS61DDP2B22M18A-400M3L ISSI, Integrated Silicon Solution Inc
165 Pin Memory IC 17mm mm
Price: 0.0000
RFQ -
CY14V256LA-BA35XI Cypress Semiconductor Corp
Surface Mount Memory IC CY14V256 256 kb kb 10mm mm 8b b
Price: 0.0000
RFQ -
MT29F2G08ABBEAHC-IT:E TR Micron Technology Inc.
63 Pin Memory IC MT29F2G08 13mm mm
Price: 3.7868
RFQ -
-
-
-
-
-
-
IS61WV3216BLL-12TLI-TR ISSI, Integrated Silicon Solution Inc
Surface Mount Memory IC 512 kb kb 5mA mA 16b b
Price: 0.7016
RFQ -
-
11AA040-I/TO Microchip Technology
2/5V V Through Hole 3 Pin Memory IC 11AA040 4 kb kb 5mA mA
Price: 0.2946
RFQ -
-
CY14B104LA-ZS20XI Cypress Semiconductor Corp
Surface Mount 44 Pin Memory IC CY14B104 4 Mb kb 18.415mm mm 70mA mA 8b b
Price: 0.0000
RFQ -
70V9369L12PF8 Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 288 kb kb 14mm mm 205mA mA 18b b
Price: 0.0000
RFQ -
-
-
71V321L35JG Integrated Device Technology (IDT)
Surface Mount 52 Pin Memory IC 16 kb kb 19mm mm 95mA mA 8b b
Price: 0.0000
RFQ -
-
M29W640GT60ZA6E Micron Technology Inc.
3/3.3V V 48 Pin Memory IC M29W640 64 Mb kb 8mm mm
Price: 0.0000
RFQ





.png)















Need Help?

