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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Capacitance JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IPN70R1K2P7SATMA1 IPN70R1K2P7SATMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-261-3 1.8mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G3 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 6.3W 12 ns 6.3W Tc 4.5A 150°C SWITCHING 60 ns SILICON N-Channel 1.2 Ω @ 900mA, 10V 3.5V @ 40μA 174pF @ 400V 4.8nC @ 10V 16V 700V 4.5A Tc 10V ±16V
IPP084N06L3GXKSA1 IPP084N06L3GXKSA1 Infineon Technologies 0.0000
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0.00000000 download 13 Weeks Through Hole Tube 2008 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 LOGIC LEVEL COMPATIBLE TO-220-3 No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-220AB 79W 15 ns 79W Tc 50A SWITCHING 0.0084Ohm 60V 37 ns SILICON N-Channel 8.4m Ω @ 50A, 10V 2.2V @ 34μA 4900pF @ 30V 29nC @ 4.5V 26ns 7 ns 20V 50A Tc 60V 200A 4.5V 10V ±20V
IPB240N04S4R9ATMA1 IPB240N04S4R9ATMA1 Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead ULTRA LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40V 300W Tc 240A 0.00087Ohm SILICON N-Channel 0.87m Ω @ 100A, 10V 4V @ 230μA 23000pF @ 25V 290nC @ 10V 240A Tc 960A 750 mJ 10V ±20V
SI2327DS-T1-GE3 SI2327DS-T1-GE3 Vishay Siliconix 0.6072
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0.00000000 download Surface Mount Tape & Reel (TR) 2012 TrenchFET® yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-236-3, SC-59, SOT-23-3 Unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 3 Other Transistors 1 Single 750mW -4.5V 750mW Ta -490mA SWITCHING 2.45Ohm SILICON P-Channel 2.35 Ω @ 500mA, 10V 4.5V @ 250μA 510pF @ 25V 12nC @ 10V 20V -200V -4.5 V 380mA Ta 200V 6V 10V ±20V
SSM6J213FE(TE85L,F SSM6J213FE(TE85L,F Toshiba Semiconductor and Storage 0.3572
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0.00000000 12 Weeks Surface Mount Cut Tape (CT) 2014 U-MOSVI Active 1 (Unlimited) EAR99 RoHS Compliant 6 SOT-563, SOT-666 unknown Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 290pF Other Transistors Single 500mW 500mW Ta 2.6A P-Channel 103m Ω @ 1.5A, 4.5V 1V @ 1mA 290pF @ 10V 4.7nC @ 4.5V 8V -20V 2.6A Ta 20V 1.5V 4.5V ±8V
APT50M65B2FLLG APT50M65B2FLLG Microsemi 0.0000
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0.00000000 download 26 Weeks Through Hole Tube 1997 POWER MOS 7® yes Active 1 (Unlimited) 3 RoHS Compliant Lead Free 67A No 3 TO-247-3 Variant Through Hole -55°C~150°C TJ 500V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE 3 1 SINGLE WITH BUILT-IN DIODE DRAIN 694W 12 ns 694W Tc 67A SWITCHING 0.065Ohm 29 ns SILICON N-Channel 65m Ω @ 33.5A, 10V 5V @ 2.5mA 7010pF @ 25V 141nC @ 10V 28ns 30 ns 30V 67A Tc 268A 10V ±30V
TSM60NB380CH C5G TSM60NB380CH C5G Taiwan Semiconductor Corporation 0.0000
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0.00000000 download 36 Weeks Tube Active 1 (Unlimited) 3 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -50°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 83W Tc SWITCHING 0.38Ohm 600V SILICON N-Channel 380m Ω @ 2.85A, 10V 4V @ 250μA 795pF @ 100V 19.4nC @ 10V 9.5A 9.5A Tc 600V 28.5A 64 mJ 10V ±30V
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