Items : %s%s
Arrays BJT Transistors
Contact Plating
- Gold
ECCN Code
- EAR99
Factory Lead Time
- 6 Weeks
- 9 Weeks
JESD-609 Code
- e3
- e4
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
Manufacturer Package Identifier
- D(R-PDSO-G16)
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 2 (1 Year)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 16
- 18
Number of Terminations
- 16
- 18
Operating Temperature
- -20°C~70°C TA
- -40°C~105°C TA
- -40°C~85°C TA
- -55°C~150°C TJ
Package / Case
- 16-DIP (0.300, 7.62mm)
- 16-SOIC (0.154, 3.90mm Width)
- 16-SOIC (0.209, 5.30mm Width)
- 16-TSSOP (0.173, 4.40mm Width)
- 18-DIP (0.300, 7.62mm)
- 18-SOIC (0.295, 7.50mm Width)
Packaging
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 2017
Series
- Automotive, AEC-Q100
Terminal Finish
- Matte Tin (Sn)
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Tin (Sn)
Transistor Element Material
- SILICON
Weight
- 1.26609g
- 141.690917mg
- 143mg
- 200.686274mg
- 61.887009mg
- 951.693491mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | RoHS Status | Radiation Hardening | Number of Pins | Package / Case | Mounting Type | Operating Temperature | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Pin Count | Qualification Status | Max Power Dissipation | Number of Elements | Polarity | Power Dissipation | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Element Material | Transistor Type | Turn On Time-Max (ton) | Turn Off Time-Max (toff) | Current - Collector Cutoff (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
JANTX2N4854 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 23 Weeks | Through Hole | Bulk | 2003 | Military, MIL-PRF-19500/421 | no | Active | 1 (Unlimited) | 6 | EAR99 | Non-RoHS Compliant | No | 6 | TO-78-6 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 6 | Qualified | 600mW | 2 | NPN, PNP | 600mW | 600mA | 40V | 40V | SILICON | NPN, PNP | 45ns | 300ns | 10μA ICBO | 60V | 5V | 100 @ 150mA 10V | 400mV @ 15mA, 150mA |
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