Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Page Size | Serial Bus Type | Refresh Cycles | Self Refresh | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AT27C512R-90RC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1998 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 28-SOIC (0.342, 8.69mm Width) | Surface Mount | 0°C~70°C TC | EPROM - OTP | AT27C512 | 28-SOIC | 90ns | 512Kb 64K x 8 | Non-Volatile | 4.5V~5.5V | EPROM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62128EV30LL-45SXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | MoBL® | yes | Active | 3 (168 Hours) | 32 | EAR99 | 3V | 1 | 20.4465mm | ROHS3 Compliant | Lead Free | No | 32 | 32-SOIC (0.445, 11.30mm Width) | 1 Mb | 45GHz | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 2.997mm | 1 | 16mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3V | 30 | CY62128 | 2.2V | 3.6V | 3-STATE | 1Mb 128K x 8 | Volatile | 17b | 2.2V~3.6V | 8 | Asynchronous | 0.000003A | 45 ns | 8b | COMMON | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||
 |
93AA46CT-I/MS | Microchip Technology | 0.2966 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Serial | 1 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.1mm | 1 | 2mA | e3 | DUAL | 260 | 2.5V | 40 | 93AA46C | 8 | 0.65mm | 2/5V | 5.5V | 200 ns | 1Kb 128 x 8 64 x 16 | Non-Volatile | 1.8V~5.5V | 64X16 | 16 | 3MHz | 0.000001A | 8 | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | ||||||||||||||||||||||||||||||||||||||
.png "MT29F128G08CBEBBL85C3WC1-R") |
MT29F128G08CBEBBL85C3WC1-R | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Active | RoHS Compliant | 0°C~70°C TA | FLASH - NAND | 128Gb 16G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7140LA25PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 8 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 170mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 5V | 3-STATE | 25 ns | 1kB | RAM, SDR, SRAM | 20b | 1KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||
 |
71421LA20J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 16 kb | 19mm | 3.63mm | CMOS | 1 | 200mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 20 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||
 |
71V321L25TFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 64 | EAR99 | 85°C | -40°C | 3.3V | 2 | 10mm | RoHS Compliant | Contains Lead | No | 64 | TQFP | Parallel | 3.6V | 3V | 16 kb | 10mm | 1.4mm | CMOS | 1.6mm | 1 | 130mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 64 | INDUSTRIAL | 0.5mm | SRAMs | 3-STATE | 25 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||
|
70P259L65BYGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | 2008 | yes | Discontinued | 3 (168 Hours) | 100 | EAR99 | 85°C | -40°C | 2 | 6mm | RoHS Compliant | Lead Free | No | 100 | TFBGA | Parallel | 3V | 1.8V | 128 kb | 6mm | 1mm | CMOS | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 2.6V | 30 | 100 | INDUSTRIAL | YES | 0.5mm | SRAMs | 3-STATE | 65 ns | 16kB | RAM, SDR, SRAM | 26b | 0.07mA | 8KX16 | 0.006A | COMMON | |||||||||||||||||||||||||||||||||||||||||||||
 |
7025L25J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 5V | 2 | 29.21mm | RoHS Compliant | Contains Lead | Lead, Tin | 84 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 128 kb | 29.21mm | 3.63mm | CMOS | 4.57mm | 1 | 220mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | NOT SPECIFIED | 84 | COMMERCIAL | SRAMs | Not Qualified | 5V | 3-STATE | 25 ns | 16kB | RAM, SDR, SRAM | 13b | 8KX16 | Asynchronous | 0.0015A | 16b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||
 |
7024S55J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2000 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 5V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | PLCC | Parallel | 5.5V | 4.5V | 64 kb | 29.21mm | 3.63mm | CMOS | 4.57mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 84 | COMMERCIAL | YES | SRAMs | 5V | 3-STATE | 55 ns | 8kB | RAM, SDR, SRAM | 24b | 4KX16 | 0.015A | COMMON | ||||||||||||||||||||||||||||||||||||||||||||
 |
7025S55JI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2008 | no | Active | 1 (Unlimited) | 84 | EAR99 | 85°C | -40°C | 5V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | BATTERY BACK UP | PLCC | Parallel | 5.5V | 4.5V | 128 kb | 29.21mm | 3.63mm | CMOS | 4.57mm | 1 | 300mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 84 | INDUSTRIAL | SRAMs | 5V | 3-STATE | 55 ns | 16kB | RAM, SDR, SRAM | 13b | 8KX16 | Asynchronous | 0.03A | 16b | COMMON | ||||||||||||||||||||||||||||||||||||||||
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TC58NVG1S3HTAI0 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 131 Weeks | Surface Mount | 1997 | Active | 85°C | -40°C | 3.3V | RoHS Compliant | TFSOP | Parallel | 3.6V | 2.7V | 2 Gb | 25 μs | EEPROM, NAND, SLC NAND | 2kB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS43TR16128DL-107MBL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tray | Active | 3 (168 Hours) | 96 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-TFBGA | 9mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.35V | 10 | YES | 0.8mm | R-PBGA-B96 | 1.283V | 1.45V | 20ns | 2Gb 128M x 16 | Volatile | 1.283V~1.45V | 128MX16 | 16 | 2147483648 bit | 933MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS66WVE2M16TCLL-70BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 48 | 8mm | ROHS3 Compliant | 48-TFBGA | 6mm | Surface Mount | -40°C~85°C TA | PSRAM (Pseudo SRAM) | ASYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | NOT SPECIFIED | YES | 0.75mm | R-PBGA-B48 | 1.7V | 1.95V | 32Mb 2M x 16 | Volatile | 1.7V~1.95V | 2MX16 | 16 | 33554432 bit | 70 ns | PSRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43LR32100C-6BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 85°C | -40°C | RoHS Compliant | 90 | 90-TFBGA | Parallel | 1.95V | 1.7V | 166MHz | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | 80mA | 166MHz | 90-TFBGA (8x13) | 5.5ns | 32Mb 1M x 32 | Volatile | 1.7V~1.95V | 32b | 166MHz | DRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS41C16100C-50TLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tape & Reel (TR) | Active | 3 (168 Hours) | 44 | 5V | ROHS3 Compliant | Tin | 44 | 50-TSOP (0.400, 10.16mm Width), 44 Leads | 128 Mb | Surface Mount | -40°C~85°C TA | DRAM - EDO | DUAL | 5V | 0.8mm | Not Qualified | 5V | 3-STATE | 25ns | 16Mb 1M x 16 | Volatile | 10b | 0.09mA | 4.5V~5.5V | 1MX16 | 16 | 16b | 0.001A | COMMON | 1024 | YES | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS62WV5128EBLL-45BLI | ISSI, Integrated Silicon Solution Inc | 4.3622 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 36 | 8mm | ROHS3 Compliant | 36-TFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 8542.32.00.41 | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.75mm | R-PBGA-B36 | 2.2V | 3.6V | 4Mb 512K x 8 | Volatile | 2.2V~3.6V | 512KX8 | 8 | 4194304 bit | 45 ns | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
709089S15PFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Synchronous | 15ns | 512Kb 64K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43DR16128B-3DBL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 84-TFBGA | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | 450ps | 2Gb 128M x 16 | Volatile | 1.7V~1.9V | 333MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT49H32M18CBM-25 IT:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2015 | Obsolete | 3 (168 Hours) | 144 | EAR99 | 1 | 18.5mm | ROHS3 Compliant | AUTO REFRESH | 144-TFBGA | 11mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 1.8V | 144 | YES | 1mm | R-PBGA-B144 | 1.7V | 1.9V | 20ns | 576Mb 32M x 18 | Volatile | 1.7V~1.9V | 32MX18 | 18 | 603979776 bit | 400MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||
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7052L25PFGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | Active | 85°C | -40°C | 5V | 4 | 14mm | RoHS Compliant | Lead Free | No | 120 | TQFP | Parallel | 5.5V | 4.5V | 16 kb | 14mm | 1.4mm | 300mA | 25 ns | RAM, SRAM | 11b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71256L35Y | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 28-BSOJ (0.300, 7.62mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71256 | 28-SOJ | 35ns | 256Kb 32K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT41K256M16HA-125:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2013 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 96-TFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | MT41K256M16 | 13.75ns | 4Gb 256M x 16 | Volatile | 1.283V~1.45V | 800MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49F002-90TI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1999 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TC | AT49F002 | 90ns | 2Mb 256K x 8 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 50μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MTFC4GACAJCN-1M WT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7006S25J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | Active | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | PLCC | Parallel | 5.5V | 4.5V | 128 kb | 24mm | 3.63mm | 265mA | 25 ns | 16kB | RAM, SDR, SRAM | 28b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7007L20J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | Active | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | PLCC | Parallel | 5.5V | 4.5V | 256 kb | 24mm | 3.63mm | 275mA | 20 ns | 32kB | RAM, SDR, SRAM | 15b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V65703S85BGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 3.3V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | FLOW-THROUGH ARCHITECTURE | BGA | Parallel | 3.465V | 3.135V | 9 Mb | 91MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 60mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 119 | INDUSTRIAL | SRAMs | 3-STATE | 8.5 ns | RAM, SRAM | 18b | 256KX36 | Synchronous | 0.06A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||
 |
70V24L55PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2004 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | TQFP | Parallel | 3.6V | 3V | 64 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 155mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 55 ns | 8kB | RAM, SDR, SRAM | 24b | 4KX16 | Asynchronous | 16b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||
 |
71V3556SA100BGG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2006 | yes | Active | 3 (168 Hours) | 119 | 70°C | 0°C | 3.3V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 100MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 250mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 119 | COMMERCIAL | SRAMs | 3-STATE | 5 ns | RAM, SRAM | 17b | Synchronous | 0.04A | 36b | COMMON |
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CY62128EV30LL-45SXIT Cypress Semiconductor Corp
Surface Mount MoBL® Memory IC MoBL® Series CY62128 1 Mb kb 20.4465mm mm 16mA mA 8b b
Price: 0.0000
RFQ -
93AA46CT-I/MS Microchip Technology
2/5V V Surface Mount 8 Pin Memory IC 93AA46C 1 kb kb 3mm mm 2mA mA
Price: 0.2966
RFQ -
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7140LA25PF Integrated Device Technology (IDT)
5V V Surface Mount 64 Pin Memory IC 8 kb kb 14mm mm 170mA mA 8b b
Price: 0.0000
RFQ -
71421LA20J8 Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 16 kb kb 19mm mm 200mA mA 8b b
Price: 0.0000
RFQ -
71V321L25TFI Integrated Device Technology (IDT)
Surface Mount 64 Pin Memory IC 16 kb kb 10mm mm 130mA mA 8b b
Price: 0.0000
RFQ -
70P259L65BYGI Integrated Device Technology (IDT)
100 Pin Memory IC 128 kb kb 6mm mm
Price: 0.0000
RFQ -
7025L25J8 Integrated Device Technology (IDT)
5V V Surface Mount 84 Pin Memory IC 128 kb kb 29.21mm mm 220mA mA 16b b
Price: 0.0000
RFQ -
7024S55J8 Integrated Device Technology (IDT)
5V V 84 Pin Memory IC 64 kb kb 29.21mm mm
Price: 0.0000
RFQ -
7025S55JI8 Integrated Device Technology (IDT)
5V V Surface Mount 84 Pin Memory IC 128 kb kb 29.21mm mm 300mA mA 16b b
Price: 0.0000
RFQ -
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IS41C16100C-50TLI-TR ISSI, Integrated Silicon Solution Inc
5V V Surface Mount Memory IC 128 Mb kb
Price: 0.0000
RFQ -
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7052L25PFGI8 Integrated Device Technology (IDT)
Surface Mount Memory IC 16 kb kb 14mm mm 300mA mA 8b b
Price: 0.0000
RFQ -
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7006S25J Integrated Device Technology (IDT)
Surface Mount Memory IC 128 kb kb 24mm mm 265mA mA 8b b
Price: 0.0000
RFQ -
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Surface Mount Memory IC 256 kb kb 24mm mm 275mA mA 8b b
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Surface Mount 119 Pin Memory IC 9 Mb kb 14mm mm 60mA mA 36b b
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Surface Mount 100 Pin Memory IC 64 kb kb 14mm mm 155mA mA 16b b
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