Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Halogen Free | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Page Size | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IS61DDB21M36-275M3 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Discontinued | 3 (168 Hours) | Non-RoHS Compliant | 165 | 165-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II | 36Mb 1M x 36 | Volatile | 1.71V~1.89V | 275MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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93C46C/WF15K | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | 0°C~70°C TA | EEPROM | 93C46C | Die | 1Kb 128 x 8 64 x 16 | Non-Volatile | 4.5V~5.5V | 3MHz | EEPROM | SPI | 2ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CAT93C66LI-G | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2007 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5V | 10.16mm | RoHS Compliant | Lead Free | Gold | No | 8 | 100 YEAR DATA RETENTION | 8-DIP (0.300, 7.62mm) | Serial | 4 kb | 4.95mm | 7.11mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 1mA | e4 | DUAL | 5V | CAT93C66 | 8 | 2.54mm | Halogen Free | 250 ns | 4Kb 512 x 8 256 x 16 | Non-Volatile | 1.8V~5.5V | 256X16 | 2MHz | 0.00001A | 100 | 1000000 Write/Erase Cycles | SOFTWARE | MICROWIRE | EEPROM | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53D4DAWT-DC | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | SDRAM - Mobile LPDDR4 | Volatile | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GD25LD20CTIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 2Mb 256K x 8 | Non-Volatile | 1.65V~2V | 50MHz | FLASH | SPI - Dual I/O | 97μs, 6ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61NVF102418-6.5B3I-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 165 | 165-TBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 6.5ns | 18Mb 1M x 18 | Volatile | 2.375V~2.625V | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS7C31026C-12JIN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tube | 2006 | yes | Active | 3 (168 Hours) | 44 | 3.3V | 1 | 28.7mm | ROHS3 Compliant | No | 44 | 44-BSOJ (0.400, 10.16mm Width) | 1 Mb | 2.92mm | 10.29mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | e3/e6 | PURE MATTE TIN/TIN BISMUTH | DUAL | 245 | 3.3V | 40 | 44 | 3V | 3.6V | 1Mb 64K x 16 | Volatile | 16b | 3V~3.6V | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL256S11TFV023 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | GL-S | Active | 3 (168 Hours) | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~105°C TA | FLASH - NOR | 110ns | 256Mb 16M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 60ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S32800G-7BL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 90 | EAR99 | 1 | 13mm | ROHS3 Compliant | 90 | AUTO/SELF REFRESH | 90-TFBGA | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | 10 | YES | 0.8mm | 3V | Not Qualified | 3.3V | 3.6V | 3-STATE | 5.4ns | 256Mb 8M x 32 | Volatile | 0.27mA | 3V~3.6V | 8MX32 | 32 | 268435456 bit | 32b | 143MHz | 0.003A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61NLF12836A-7.5TQI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | no | Not For New Designs | 2 (1 Year) | 100 | 3A991.B.2.A | 20mm | Non-RoHS Compliant | 100 | FLOW-THROUGH ARCHITECTURE | 100-LQFP | 14mm | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | QUAD | 240 | 3.3V | 10 | 100 | YES | 0.65mm | 3.135V | Not Qualified | 2.5/3.33.3V | 3.465V | 3-STATE | 7.5ns | 4.5Mb 128K x 36 | Volatile | 0.16mA | 3.135V~3.465V | 128KX36 | 36 | 4718592 bit | 117MHz | 0.035A | COMMON | 3.14V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V3556S166BG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | 3 (168 Hours) | 119 | 3A991.B.2.A | 70°C | 0°C | 22mm | Non-RoHS Compliant | BGA | Parallel | not_compliant | 166MHz | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 119 | COMMERCIAL | YES | 1.27mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.35mA | 128KX36 | 36 | 4718592 bit | 0.04A | 3.5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7005L25PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2005 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | TQFP | Parallel | 5.5V | 4.5V | 64 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | YES | 0.8mm | SRAMs | 5V | 3-STATE | 25 ns | 8kB | RAM, SDR, SRAM | 26b | 8KX8 | 0.0015A | YES | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IS25WD040-JBLE | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 3 (168 Hours) | 8 | 1.8V | RoHS Compliant | 8 | 8-SOIC (0.209, 5.30mm Width) | SPI, Serial | 4 Mb | Surface Mount | 540.001716mg | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 5mA | 2.16mm | 1 | DUAL | 1.8V | YES | 1.27mm | 1.65V | Not Qualified | 1.95V | AEC-Q100 | 4Mb 512K x 8 | Non-Volatile | 19b | 1.65V~1.95V | 8 | 8b | 80MHz | 0.00001A | 20 | 200000 Write/Erase Cycles | HARDWARE/SOFTWARE | 256B | SPI | FLASH | SPI | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT25QL128ABA1EW7-MSIT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 22 Weeks | Bulk | Active | 3 (168 Hours) | 8 | 3A991.B.1.A | 6mm | ROHS3 Compliant | 8-WDFN Exposed Pad | 5mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 0.8mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-N8 | 2.7V | 3.6V | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 16MX8 | 8 | 134217728 bit | SERIAL | 133MHz | 3.3V | FLASH | SPI | 8ms, 2.8ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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11AA161-I/TO | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Bulk | 2009 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Tin | 3 | TO-226-3, TO-92-3 (TO-226AA) | Serial | 16 kb | Through Hole | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | 5mA | e3 | BOTTOM | NOT SPECIFIED | 5V | NOT SPECIFIED | 11AA161 | 3 | 1.27mm | 1.8V | Not Qualified | 2/5V | 5.5V | 16Kb 2K x 8 | Non-Volatile | 1.8V~5.5V | 2KX8 | 8 | 100kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 10ms | 1-WIRE | EEPROM | Single Wire | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42RM32100D-6BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 90 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 90-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 2.5V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B90 | 2.3V | 2.7V | 5.5ns | 32Mb 1M x 32 | Volatile | 2.3V~2.7V | 1MX32 | 32 | 33554432 bit | 166MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MB85RE4M2TFN-G-ASE1 | Fujitsu Electronics America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | RoHS Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | 44-TSOP | 4Mb 256K x 16 | Non-Volatile | 1.8V~3.6V | FRAM | 150ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42VM32200M-75BLI | ISSI, Integrated Silicon Solution Inc | 5.1708 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 90 | EAR99 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 90-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B90 | 1.7V | 1.95V | 6ns | 64Mb 2M x 32 | Volatile | 1.7V~1.95V | 2MX32 | 32 | 67108864 bit | 133MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42RM32100D-75BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 90 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 90-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 2.5V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B90 | 2.3V | 2.7V | 6ns | 32Mb 1M x 32 | Volatile | 2.3V~2.7V | 1MX32 | 32 | 33554432 bit | 133MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS66WV51216EBLL-70BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 48 | 8mm | ROHS3 Compliant | 48-TFBGA | 6mm | Surface Mount | -40°C~85°C TA | PSRAM (Pseudo SRAM) | ASYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.75mm | R-PBGA-B48 | 2.5V | 3.6V | 8Mb 512K x 16 | Volatile | 2.5V~3.6V | 512KX16 | 16 | 8388608 bit | 70 ns | PSRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43LR32800G-6BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 90 | 90-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | 5.5ns | 256Mb 8M x 32 | Volatile | 1.7V~1.95V | 32b | 166MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24FC128T-I/MF | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 6mm | ROHS3 Compliant | Tin | 8 | 1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS | 8-VDFN Exposed Pad | I2C, Serial | 128 kb | 5mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1mm | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24FC128 | 8 | 1.27mm | 1.7V | Not Qualified | 2/5V | 5.5V | 400ns | 128Kb 16K x 8 | Non-Volatile | 1.7V~5.5V | 8 | 1MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||
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709099L7PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT709099 | 7ns | 1Mb 128K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71342SA25PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 32 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 280mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 5V | 3-STATE | 25 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | Asynchronous | 0.015A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||
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24FC512-I/SM | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 2.5V | 5.21mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.209, 5.30mm Width) | 2-Wire, I2C, Serial | No SVHC | 512 kb | 1.88mm | 5.28mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 5mA | e3 | Matte Tin (Sn) | DUAL | 2.5V | 24FC512 | 8 | 1.27mm | 1.7V | 2/5V | 5.5V | 400ns | 512Kb 64K x 8 | Non-Volatile | 1.7V~5.5V | 1MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||
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MT47H64M16HR-25E IT:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2010 | Obsolete | 3 (168 Hours) | 84 | EAR99 | 1 | 12.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 84-TFBGA | unknown | 8mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 30 | MT47H64M16 | 84 | YES | 0.8mm | R-PBGA-B84 | 1.7V | Not Qualified | 1.8V | 1.9V | 3-STATE | 400ps | 1Gb 64M x 16 | Volatile | 0.44mA | 1.7V~1.9V | 64MX16 | 16 | 1073741824 bit | 400MHz | 0.007A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||||
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7133SA55J8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 68-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7133 | 32Kb 2K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS43R32800D-5B-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 144-LFBGA | Surface Mount | 0°C~70°C TA | SDRAM - DDR | 700ps | 256Mb 8M x 32 | Volatile | 2.3V~2.7V | 200MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F64G08CBCGBSX-37BES:G TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 0°C~70°C TA | FLASH - NAND | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | 167MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AK93C55CL | AKM Semiconductor Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2005 | Obsolete | 1 (Unlimited) | Surface Mount | -40°C~85°C TA | EEPROM | 8-SON | 2Kb 128 x 16 | Non-Volatile | 1.5V~5.5V | 4MHz | EEPROM | SPI |
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CAT93C66LI-G ON Semiconductor
Through Hole 8 Pin Memory IC CAT93C66 4 kb kb 10.16mm mm 1mA mA
Price: 0.0000
RFQ -
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AS7C31026C-12JIN Alliance Memory, Inc.
Surface Mount 44 Pin Memory IC 1 Mb kb 28.7mm mm
Price: 0.0000
RFQ -
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IS61NLF12836A-7.5TQI ISSI, Integrated Silicon Solution Inc
2.5/3.33.3V V 100 Pin Memory IC 20mm mm
Price: 0.0000
RFQ -
IDT71V3556S166BG8 Integrated Device Technology (IDT)
3.3V V 119 Pin Memory IC 22mm mm
Price: 0.0000
RFQ -
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