Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IS61QDP2B451236A-400M3L | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 165 | 17mm | ROHS3 Compliant | 165 | 165-LBGA | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QUADP | 1.4mm | 1 | BOTTOM | 1.8V | YES | 1mm | 1.71V | Not Qualified | 1.5/1.81.8V | 1.89V | 3-STATE | 8.4ns | 18Mb 512K x 36 | Volatile | 1.2mA | 1.71V~1.89V | 512KX36 | 36 | 18874368 bit | 400MHz | 0.36A | SEPARATE | 1.7V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX29LV800CBXEC-70G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tray | 2012 | MX29LV | Active | 3 (168 Hours) | 70°C | 0°C | ROHS3 Compliant | 48-LFBGA, CSPBGA | Parallel | Surface Mount | 0°C~70°C TA | FLASH - NOR | 48-LFBGA, CSP (6x8) | 70ns | 8Mb 1M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR93H66RFVT-2CE2 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Cut Tape (CT) | 2015 | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | 8 | 8-TSSOP (0.173, 4.40mm Width) | Unknown | 3mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 4V | NOT SPECIFIED | YES | 0.65mm | 2.5V | Not Qualified | 3/5V | 5.5V | 4Kb 256 x 16 | Non-Volatile | 0.003mA | 2.5V~5.5V | 256X16 | 16 | 4096 bit | SERIAL | 2MHz | 0.00001A | 100 | 1000000 Write/Erase Cycles | SOFTWARE | 4ms | 3-WIRE | EEPROM | SPI | 4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V321L25TF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 3.3V | 2 | 10mm | RoHS Compliant | Contains Lead | No | 64 | BATTERY BACKUP;AUTOMATIC POWER DOWN | TQFP | Parallel | 3.6V | 3V | 16 kb | 10mm | 1.4mm | CMOS | 1.6mm | 1 | 100mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 64 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 25 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V546S100PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | 2007 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | PIPELINED ARCHITECTURE | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 100MHz | 14mm | 1.4mm | CMOS | 1 | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | YES | 0.65mm | SRAMs | 3-STATE | 5 ns | 100MHz | 512kB | RAM, SDR, SRAM | 17b | 0.26mA | 0.045A | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "7005L17J") |
7005L17J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2012 | Active | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | PLCC | Parallel | 5.5V | 4.5V | 64 kb | 24mm | 3.63mm | 260mA | 17 ns | 8kB | RAM, SDR, SRAM | 26b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75802S133BGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | 2012 | no | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 2.5V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 2.625V | 2.375V | 18 Mb | 133MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 215mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 119 | INDUSTRIAL | SRAMs | 3-STATE | 4.2 ns | RAM, SRAM | 20b | Synchronous | 0.045A | 18b | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT53E256M32D2DS-046 AAT:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -40°C~105°C | SDRAM - Mobile LPDDR4 | 8Gb 256M x 32 | Volatile | 0.6V 1.1V | 2.133GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16160G-7BL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 54 | ROHS3 Compliant | 54 | 54-TFBGA | Surface Mount | 0°C~70°C TA | SDRAM | BOTTOM | 3.3V | YES | 0.8mm | Not Qualified | 3.3V | 3-STATE | 5.4ns | 256Mb 16M x 16 | Volatile | 0.13mA | 3V~3.6V | 16MX16 | 16 | 16b | 143MHz | 0.004A | COMMON | 8192 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
8 611 200 983 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Last Time Buy | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR25G320FJ-E2 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | 32Kb 4K x 8 | Non-Volatile | 1.6V~5.5V | 20MHz | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL064N11FFIV22 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | 1997 | GL-N | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | 64 | 64-LBGA | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | 260 | 3V | 40 | YES | 1mm | 2.7V | Not Qualified | 1.8/3.33/3.3V | 3.6V | 64Mb 8M x 8 4M x 16 | Non-Volatile | 0.05mA | 1.65V~3.6V | 4MX16 | 16 | 0.000005A | 110 ns | 8 | 3V | YES | YES | YES | 128 | 8/16words | YES | YES | FLASH | Parallel | 110ns | 64K | BOTTOM/TOP | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1472BV33-200BZC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | NoBL™ | Obsolete | 3 (168 Hours) | 165 | 17mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | 165-LBGA | unknown | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.4mm | 1 | BOTTOM | 3.3V | 165 | YES | 1mm | R-PBGA-B165 | 3.135V | COMMERCIAL | 3.6V | 3ns | 72Mb 4M x 18 | Volatile | 3.135V~3.6V | 4MX18 | 18 | 75497472 bit | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W979H6KBVX2I | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | 2016 | Active | 3 (168 Hours) | 134 | 1 | 11.5mm | ROHS3 Compliant | 134 | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 134-VFBGA | 10mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 1mm | 1 | BOTTOM | 1.2V | YES | 0.65mm | 1.14V | 1.3V | 512Mb 32M x 16 | Volatile | 1.14V~1.95V | 32MX16 | 16 | 536870912 bit | 400MHz | FOUR BANK PAGE BURST | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T3539MS133BCI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | Active | 85°C | -40°C | 2.5V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | Parallel | 2.6V | 2.4V | 18 Mb | 133MHz | 17mm | 1.4mm | 900mA | 900mA | 4.2 ns | 133MHz | 2.3MB | RAM, SDR, SRAM | 38b | Synchronous | 36b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48LC2M32B2P-6A AIT:J | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Bulk | 2013 | Automotive, AEC-Q100 | Last Time Buy | 3 (168 Hours) | 86 | 1 | 22.22mm | ROHS3 Compliant | AUTO/SELF REFRESH | 86-TFSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | DUAL | 3.3V | MT48LC2M32B2 | YES | 0.5mm | R-PDSO-G86 | 3V | 3.6V | 5.4ns | 64Mb 2M x 32 | Volatile | 3V~3.6V | 2MX32 | 32 | 67108864 bit | 167MHz | DRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416YS10PHI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2008 | 85°C | -40°C | Non-RoHS Compliant | TSOP | Parallel | RAM, SRAM - Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V632S6PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2015 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | ALSO REQUIRES 3.3V I/O SUPPLY | TQFP | Parallel | 3.63V | 3.135V | 2 Mb | 83.3MHz | 14mm | 1.4mm | CMOS | 1 | 180mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.65mm | SRAMs | 3-STATE | 6 ns | RAM, SRAM | 16b | 64KX32 | Synchronous | 32b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V3379S5PRFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 128 | 85°C | -40°C | 3.3V | 2 | 20mm | RoHS Compliant | Contains Lead | No | 128 | PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE | TQFP | Parallel | 3.45V | 3.15V | 576 kb | 100MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 415mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 128 | INDUSTRIAL | 0.5mm | SRAMs | 3-STATE | 5 ns | RAM, SRAM | 15b | Synchronous | 0.03A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS42S16160G-6BI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 54-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM | 5.4ns | 256Mb 16M x 16 | Volatile | 3V~3.6V | 166MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V26L35G | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | 2009 | Active | 70°C | 0°C | 3.3V | 2 | 27.94mm | RoHS Compliant | Contains Lead | No | 84 | Parallel | 3.6V | 3V | 256 kb | 27.94mm | 3.68mm | 120mA | 35 ns | RAM, SRAM | 28b | Asynchronous | 16b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC56CT-E/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | Serial | 2 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | 1.2mm | 1 | 2mA | e3 | DUAL | 260 | 5V | 40 | 93LC56C | 8 | 0.65mm | 2.5V | 3/5V | 5.5V | 200 ns | 2Kb 256 x 8 128 x 16 | Non-Volatile | 2.5V~5.5V | 16 | 3MHz | 0.000005A | 8 | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RM24C512C-LMAI-T | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel (TR) | 1997 | Mavriq™ | yes | Not For New Designs | 1 (Unlimited) | 8 | 3mm | ROHS3 Compliant | 8-UFDFN Exposed Pad | 2-Wire, I2C, Serial | 2mm | Surface Mount | -40°C~85°C TA | CBRAM | SYNCHRONOUS | 0.6mm | 1 | DUAL | 3.3V | YES | 0.5mm | R-PDSO-G8 | 1.65V | 3.6V | 512kb 128B Page Size | Non-Volatile | 1.65V~3.6V | 512KX1 | 1 | 524288 bit | 1MHz | I2C | CBRAM® | I2C | 100μs, 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7008S35G | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Bulk | 2008 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 5V | 2 | 27.94mm | RoHS Compliant | Contains Lead | No | 84 | Parallel | 5.5V | 4.5V | 512 kb | 27.94mm | 3.68mm | CMOS | 1 | 295mA | e0 | TIN LEAD | PERPENDICULAR | PIN/PEG | 240 | 5V | 84 | COMMERCIAL | SRAMs | 5V | 3-STATE | 35 ns | 64kB | RAM, SDR, SRAM | 32b | 64KX8 | Asynchronous | 0.015A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V35761S200BGG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 119-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V35761 | 3.1ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS61WV51216EEBLL-10B2LI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 48 | 8mm | ROHS3 Compliant | 48-TFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.75mm | R-PBGA-B48 | 2.4V | 3.6V | 8Mb 512K x 16 | Volatile | 2.4V~3.6V | 512KX16 | 16 | 8388608 bit | 10 ns | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS7C1024B-12JCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2002 | yes | Active | 3 (168 Hours) | 32 | 20.995mm | ROHS3 Compliant | 32 | 32-BSOJ (0.400, 10.16mm Width) | 10.16mm | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 3.7084mm | 1 | e3/e6 | PURE MATTE TIN/TIN BISMUTH | DUAL | 245 | 5V | 40 | 32 | YES | 1.27mm | 4.5V | 5.5V | 1Mb 128K x 8 | Volatile | 4.5V~5.5V | 128KX8 | 8 | 1048576 bit | 12 ns | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7008L35PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2010 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 5.5V | 4.5V | 512 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 255mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 35 ns | 64kB | RAM, SDR, SRAM | 32b | 64KX8 | Asynchronous | 0.005A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7024L17J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 5V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | PLCC | Parallel | 5.5V | 4.5V | 64 kb | 29.21mm | 3.63mm | CMOS | 4.57mm | 1 | 260mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 84 | COMMERCIAL | SRAMs | 5V | 3-STATE | 17 ns | 8kB | RAM, SDR, SRAM | 24b | 4KX16 | Asynchronous | 0.0015A | 16b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71421SA35PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | TQFP | Parallel | 5.5V | 4.5V | 16 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 165mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 5V | 3-STATE | 35 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.015A | 8b | COMMON |
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IS61QDP2B451236A-400M3L ISSI, Integrated Silicon Solution Inc
1.5/1.81.8V V Memory IC 17mm mm
Price: 0.0000
RFQ -
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BR93H66RFVT-2CE2 ROHM Semiconductor
3/5V V Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 4.4mm mm
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100 Pin Memory IC 4.5 Mb kb 20mm mm
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Surface Mount Memory IC 64 kb kb 24mm mm 260mA mA 8b b
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S29GL064N11FFIV22 Cypress Semiconductor Corp
1.8/3.33/3.3V V GL-N Memory IC GL-N Series 13mm mm
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MT48LC2M32B2P-6A AIT:J Micron Technology Inc.
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93LC56CT-E/ST Microchip Technology
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7008S35G Integrated Device Technology (IDT)
5V V Through Hole 84 Pin Memory IC 512 kb kb 27.94mm mm 295mA mA 8b b
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7008L35PF Integrated Device Technology (IDT)
5V V Surface Mount 100 Pin Memory IC 512 kb kb 14mm mm 255mA mA 8b b
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7024L17J8 Integrated Device Technology (IDT)
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71421SA35PF Integrated Device Technology (IDT)
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RFQ
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