Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Serial Bus Type | I2C Control Byte | Reverse Pinout | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MT29F16G08ABACAWP:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2016 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND | 16Gb 2G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FM25V05-GTR | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | F-RAM™ | yes | Active | 3 (168 Hours) | 8 | EAR99 | 3.3V | 4.9mm | ROHS3 Compliant | Lead Free | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 512 kb | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | SYNCHRONOUS | 1.75mm | 1 | 3mA | e3 | Tin (Sn) | DUAL | 260 | 3.3V | 30 | FM25V05 | 8 | 1.27mm | 2V | SRAMs | Not Qualified | 3.6V | 9 ns | 512Kb 64K x 8 | Non-Volatile | 2V~3.6V | 8 | 8b | 40MHz | 0.00015A | 8b | FRAM | SPI | ||||||||||||||||||||||||||||||||||||||||||||
 |
7130LA25TFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2013 | yes | 3 (168 Hours) | 64 | EAR99 | 85°C | -40°C | 2 | 10mm | RoHS Compliant | Lead Free | 64 | LQFP | Parallel | 10mm | 1.4mm | CMOS | ASYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 5V | 30 | 64 | INDUSTRIAL | YES | 0.5mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM | 0.22mA | 1KX8 | 8192 bit | 0.004A | 25 ns | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||
 |
IS66WVE4M16BLL-70BLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | yes | Active | 3 (168 Hours) | 48 | 1 | 8mm | ROHS3 Compliant | No | 48 | 48-TFBGA | 64 Mb | Surface Mount | -40°C~85°C TA | PSRAM (Pseudo SRAM) | 30mA | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3V | 40 | 48 | YES | 0.75mm | 2.7V | Other Memory ICs | 3/3.3V | 3.6V | 3-STATE | 64Mb 4M x 16 | Volatile | 22b | 2.7V~3.6V | 16 | 70 ns | COMMON | PSRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "S99PL064J0039") |
S99PL064J0039 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7006L25PFG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | yes | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Lead Free | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 128 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 220mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 5V | 30 | 64 | COMMERCIAL | 0.8mm | SRAMs | 5V | 3-STATE | 25 ns | 16kB | RAM, SDR, SRAM | 28b | 16KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416VL15PH8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | 70°C | 0°C | 18.41mm | Non-RoHS Compliant | TSOP | Parallel | 10.16mm | CMOS | 1.2mm | 8542.32.00.41 | 1 | e0 | TIN LEAD | DUAL | GULL WING | 225 | 3.3V | 20 | 44 | COMMERCIAL | YES | 0.8mm | R-PDSO-G44 | 3V | Not Qualified | 3.6V | RAM, SRAM - Asynchronous | 256KX16 | 16 | 4194304 bit | 15 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V65603S100BGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2007 | no | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 3.3V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 3.465V | 3.135V | 9 Mb | 100MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 270mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 119 | INDUSTRIAL | SRAMs | 3-STATE | 10 ns | 100MHz | 1.1MB | RAM, SDR, SRAM | 18b | 256KX36 | Synchronous | 0.06A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||
|
MT53B384M64D4EZ-062 WT:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 24Gb 384M x 64 | Volatile | 1.1V | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7054S20PRF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 128-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Quad Port, Asynchronous | IDT7054 | 128-TQFP (14x20) | 20ns | 32Kb 4K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V3569S4DR | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2008 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 3.3V | 2 | 28mm | RoHS Compliant | Contains Lead | No | 208 | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | PQFP | Parallel | 3.45V | 3.15V | 576 kb | 133MHz | 28mm | 3.5mm | CMOS | 1 | 460mA | e0 | Tin/Lead (Sn/Pb) | QUAD | GULL WING | 225 | 3.3V | 208 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 7.5 ns | 72kB | RAM, SDR, SRAM | 28b | 16KX36 | Synchronous | 0.015A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||
 |
7164L25YG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | yes | Active | 3 (168 Hours) | 28 | EAR99 | 70°C | 0°C | 5V | 1 | 17.9mm | RoHS Compliant | Lead Free | No | 28 | Parallel | 5.5V | 4.5V | 64 kb | 7.6mm | 2.67mm | CMOS | 3.556mm | 1 | 80mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 5V | 28 | COMMERCIAL | SRAMs | 5V | 3-STATE | 25 ns | 8kB | RAM, SDR, SRAM - Asynchronous | 13b | 8KX8 | Asynchronous | 0.00006A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||
 |
71V65903S80BQ | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | no | Active | 3 (168 Hours) | 165 | 70°C | 0°C | 3.3V | 1 | 15mm | RoHS Compliant | Contains Lead | No | 165 | FLOW-THROUGH ARCHITECTURE | Parallel | 3.465V | 3.135V | 9 Mb | 95MHz | 13mm | 1.2mm | CMOS | 1 | 250mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | COMMERCIAL | SRAMs | 3-STATE | 8 ns | RAM, SRAM | 19b | Synchronous | 0.04A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3558S100PFG | Integrated Device Technology (IDT) | 6.8018 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2013 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 100MHz | 14mm | 1.4mm | CMOS | 1 | 250mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 5 ns | 100MHz | 512kB | RAM, SDR, SRAM | 18b | Synchronous | 0.04A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||
 |
71V016SA15BFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2011 | Active | 85°C | -40°C | 3.3V | 1 | 7mm | RoHS Compliant | Lead Free | No | 48 | Parallel | 3.6V | 3V | 1 Mb | 7mm | 1.4mm | 130mA | 15 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 16b | Asynchronous | 16b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V321S25J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 3.3V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | BATTERY BACKUP OPERATION | PLCC | Parallel | 3.6V | 3V | 16 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 130mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 52 | INDUSTRIAL | SRAMs | 3-STATE | 25 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.005A | 8b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||
|
7016L35J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | PLCC | Parallel | 5.5V | 4.5V | 144 kb | 24mm | 3.63mm | CMOS | 4.57mm | 1 | 210mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 68 | COMMERCIAL | SRAMs | 5V | 3-STATE | 35 ns | 18kB | RAM, SDR, SRAM | 28b | 16KX9 | Asynchronous | 0.005A | 9b | COMMON | |||||||||||||||||||||||||||||||||||||||||||
 |
7132LA25JGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2013 | yes | 52 | EAR99 | 85°C | -40°C | 5V | 2 | 19mm | RoHS Compliant | Lead Free | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 16 kb | 19mm | 3.63mm | CMOS | 1 | e3 | MATTE TIN | QUAD | J BEND | 260 | 5V | 30 | 52 | INDUSTRIAL | YES | 25 ns | 2kB | RAM, SDR, SRAM | 22b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT28EW512ABA1HPC-1SIT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 64-LBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | 64-LBGA (11x13) | 95ns | 512Mb 64M x 8 32M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7130LA35PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | Active | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 8 kb | 14mm | 1.4mm | 120mA | 35 ns | 1kB | RAM, SDR, SRAM | 10b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CY2545C033 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS45S16160G-7CTLA1 | ISSI, Integrated Silicon Solution Inc | 6.5681 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Surface Mount | Tray | Active | 3 (168 Hours) | 54 | 3.3V | 1 | 22.22mm | ROHS3 Compliant | 54 | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 256 Mb | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | 130mA | DUAL | 3.3V | 0.8mm | 3V | Not Qualified | 3.6V | 3-STATE | 5.4ns | AEC-Q100 | 256Mb 16M x 16 | Volatile | 15b | 3V~3.6V | 16MX16 | 16 | 16b | 143MHz | 0.004A | COMMON | 8192 | DRAM | Parallel | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S32200L-6B | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 90 | EAR99 | 1 | 13mm | Non-RoHS Compliant | 90 | AUTO/SELF REFRESH | 90-TFBGA | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.02 | 1 | BOTTOM | 3.3V | 90 | YES | 0.8mm | 3V | 3.6V | 5.4ns | 64Mb 2M x 32 | Volatile | 3V~3.6V | 2MX32 | 32 | 67108864 bit | 32b | 166MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC256T-E/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | I2C, Serial | 256 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | 1.2mm | 1 | 3mA | e3 | DUAL | 260 | 40 | 24LC256 | 8 | 0.65mm | 2.5V | 3/5V | 5.5V | 900ns | 256Kb 32K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | NO | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||
 |
25AA640T-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | 1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 64 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 5mA | e3 | Matte Tin (Sn) | DUAL | 260 | 2.5V | 40 | 25AA640 | 8 | YES | 1.27mm | 2/5V | 5.5V | 475 ns | 64Kb 8K x 8 | Non-Volatile | 1.8V~5.5V | 8 | 1MHz | 0.000001A | 200 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||
 |
70V25L25PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | TQFP | Parallel | 3.6V | 3V | 128 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 165mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 25 ns | 16kB | RAM, SDR, SRAM | 26b | 8KX16 | Asynchronous | 16b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||
 |
70V631S10BC8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 3.3V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | Parallel | 3.45V | 3.15V | 4.5 Mb | 17mm | 1.4mm | CMOS | 1.7mm | 1 | 500mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 256 | COMMERCIAL | 1mm | SRAMs | 3-STATE | 10 ns | RAM, SRAM | 36b | Asynchronous | 0.015A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416L10Y8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 44-BSOJ (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V416 | 44-SOJ | 10ns | 4Mb 256K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49BV162AT-70TU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TC | AT49BV162 | 70ns | 16Mb 2M x 8 1M x 16 | Non-Volatile | 2.65V~3.6V | FLASH | Parallel | 200μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
25AA256T-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 256 kb | 3.91mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 6mA | e3 | Matte Tin (Sn) | DUAL | 260 | 2.5V | 40 | 25AA256 | 8 | 1.27mm | 2/5V | 5.5V | 50 ns | 256Kb 32K x 8 | Non-Volatile | 1.8V~5.5V | 8 | 10MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms |
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FM25V05-GTR Cypress Semiconductor Corp
Surface Mount F-RAM™ 8 Pin Memory IC F-RAM™ Series FM25V05 512 kb kb 4.9mm mm 3mA mA 8b b
Price: 0.0000
RFQ -
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IS66WVE4M16BLL-70BLI ISSI, Integrated Silicon Solution Inc
3/3.3V V 48 Pin Memory IC 64 Mb kb 8mm mm
Price: 0.0000
RFQ -
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7006L25PFG Integrated Device Technology (IDT)
5V V Surface Mount 64 Pin Memory IC 128 kb kb 14mm mm 220mA mA 8b b
Price: 0.0000
RFQ -
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71V65603S100BGI Integrated Device Technology (IDT)
Surface Mount 119 Pin Memory IC 9 Mb kb 14mm mm 270mA mA 36b b
Price: 0.0000
RFQ -
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70V3569S4DR Integrated Device Technology (IDT)
Surface Mount 208 Pin Memory IC 576 kb kb 28mm mm 460mA mA 36b b
Price: 0.0000
RFQ -
7164L25YG Integrated Device Technology (IDT)
5V V Surface Mount 28 Pin Memory IC 64 kb kb 17.9mm mm 80mA mA 8b b
Price: 0.0000
RFQ -
71V65903S80BQ Integrated Device Technology (IDT)
Surface Mount 165 Pin Memory IC 9 Mb kb 15mm mm 250mA mA 18b b
Price: 0.0000
RFQ -
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