Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Ready/Busy | Common Flash Interface | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CY62167ELL-45ZXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tray | 2001 | MoBL® | Active | 3 (168 Hours) | 48 | 5V | 1 | ROHS3 Compliant | Lead Free | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | 16 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 30mA | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 30 | CY62167 | 48 | 0.5mm | 5V | 3-STATE | 16Mb 2M x 8 1M x 16 | Volatile | 4.5V~5.5V | 16 | Asynchronous | 45 ns | 8 | COMMON | 2V | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62147EV30LL-45ZSXA | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2001 | MoBL® | Discontinued | 3 (168 Hours) | 44 | 3V | 1 | 18.52mm | ROHS3 Compliant | Lead Free | No | 44 | 44-TSOP (0.400, 10.16mm Width) | 4 Mb | 1.04mm | 10.26mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 20mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3V | 30 | CY62147 | 44 | 0.8mm | 2.2V | 3.6V | 3-STATE | 4Mb 256K x 16 | Volatile | 18b | 2.2V~3.6V | Asynchronous | 0.000007A | 45 ns | 16b | COMMON | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61DDB22M18A-250B4LI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Discontinued | 3 (168 Hours) | 165 | 3A991.B.2.A | 15mm | ROHS3 Compliant | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 13mm | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, DDR II | 1.4mm | 8542.32.00.41 | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | 165 | YES | 1mm | 1.71V | 1.89V | 8.4ns | 36Mb 2M x 18 | Volatile | 1.71V~1.89V | 2MX18 | 18 | 37748736 bit | 250MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71T75602S100PFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | 3 (168 Hours) | 100 | 3A991.B.2.A | 85°C | -40°C | 20mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | not_compliant | 100MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 2.5V | 20 | 100 | INDUSTRIAL | YES | 0.65mm | R-PQFP-G100 | 2.375V | SRAMs | Not Qualified | 2.5V | 2.625V | 3-STATE | RAM, SRAM | 0.195mA | 512KX36 | 36 | 18874368 bit | 0.06A | 5 ns | COMMON | 2.38V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28BV256-20JI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | -40°C~85°C TC | EEPROM | AT28BV256 | 32-PLCC (13.97x11.43) | 200ns | 256Kb 32K x 8 | Non-Volatile | 2.7V~3.6V | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71421LA35J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2008 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 16 kb | 19mm | 3.63mm | CMOS | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | YES | SRAMs | 5V | 3-STATE | 35 ns | 2kB | RAM, SDR, SRAM | 22b | 0.0015A | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "DS1345YL-70IND") |
DS1345YL-70IND | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2000 | Obsolete | 1 (Unlimited) | 34 | EAR99 | 24.4475mm | Non-RoHS Compliant | Contains Lead | 34 | DATA RETENTION = 10 YRS | 34-LPM | not_compliant | 70GHz | 21.5265mm | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 6.35mm | 8542.32.00.41 | 1 | DUAL | 225 | 5V | NOT SPECIFIED | DS1345Y | 34 | YES | 1.27mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 1Mb 128K x 8 | Non-Volatile | 0.085mA | 4.5V~5.5V | 128KX8 | 8 | 1048576 bit | 0.00015A | 70 ns | NVSRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS2502R-00C+T&R | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2015 | Obsolete | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 3 | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -40°C~85°C TA | EPROM - OTP | DS2502 | SOT-23-3 | 1Kb 128 x 8 | Non-Volatile | 2.8V~6V | EPROM | 1-Wire® | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1245AB-120+ | Maxim Integrated | 33.1429 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | Tube | 2004 | yes | Active | 1 (Unlimited) | 32 | 3A991.B.2.A | ROHS3 Compliant | Lead Free | 32 | 32-DIP Module (0.600, 15.24mm) | not_compliant | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8473.30.11.40 | 1 | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | DS1245AB | 32 | NO | 2.54mm | 4.75V | SRAMs | Not Qualified | 5V | 5.25V | 1Mb 128K x 8 | Non-Volatile | 0.085mA | 4.75V~5.25V | 128KX8 | 8 | 1048576 bit | 0.0006A | 120 ns | NVSRAM | Parallel | 120ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS2502P-E48+ | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tube | 2003 | yes | Active | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 3.94mm | ROHS3 Compliant | Lead Free | Tin | No | 6 | 6-LSOJ (0.148, 3.76mm Width) | Serial | Unknown | 1.5mm | Surface Mount | -40°C~85°C TA | EPROM - OTP | 5μA | 8542.32.00.71 | 1 | e3 | DUAL | 260 | 30 | DS2502 | 6 | 1.27mm | 2.8V | Other Memory ICs | 3/5V | 6V | 1Kb 128 x 8 | Non-Volatile | 0.000005mA | 2.8V~6V | 1KX1 | 1 | 1024 bit | 0.000005A | COMMON | EPROM | 1-Wire® | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS2431Q+U | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 3 Weeks | Strip | 2003 | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | No | 6 | 6-WDFN Exposed Pad | Serial | 5.25V | Unknown | 2.8V | 1 kb | Surface Mount | -40°C~85°C TA | CMOS | 8542.32.00.51 | e3 | Matte Tin (Sn) | DUAL | 225 | DS2431 | YES | 0.95mm | 3/5V | 2μs | 1Kb 256 x 4 | Non-Volatile | 4 | 40 | 50000 Write/Erase Cycles | EEPROM | 1-Wire® | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS2431G+U | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Surface Mount | Strip | 2003 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6mm | ROHS3 Compliant | Tin | No | 2 | 2-SFN | Serial | 5.25V | Unknown | 2.8V | 1 kb | 6mm | Surface Mount | -40°C~85°C TA | CMOS | 1mm | 1 | e3 | BOTTOM | 225 | DS2431 | 3/5V | 2μs | 1Kb 256 x 4 | Non-Volatile | 1KX1 | 1 | 40 | 50000 Write/Erase Cycles | EEPROM | 1-Wire® | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
DS2432P-W04+1T | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CY62167G18-55ZXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tape & Reel (TR) | 2011 | MoBL® | yes | Active | 3 (168 Hours) | 48 | 3A991.B.2.A | 18.4mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 8542.32.00.41 | 1 | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-G48 | 1.65V | 2.2V | 16Mb 2M x 8 1M x 16 | Volatile | 1.65V~2.2V | 1MX16 | 16 | 16777216 bit | 55 ns | 8 | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F512G08CMCABH7-6:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2016 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 152-TBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | MT29F512G08 | 512Gb 64G x 8 | Non-Volatile | 2.7V~3.6V | 166MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C04N-10SI-2.5 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | AT24C04 | 8-SOIC | 900ns | 4Kb 512 x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT53E128M32D2DS-053 WT:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -30°C~85°C | SDRAM - Mobile LPDDR4 | 4Gb 128M x 32 | Volatile | 0.6V 1.1V | 1.866GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS61NLP25672-200B1I | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | no | Active | 3 (168 Hours) | 209 | 3A991.B.2.A | 22mm | ROHS3 Compliant | 209 | PIPELINED ARCHITECTURE | 209-BGA | 14mm | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.95mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 209 | YES | 1mm | 3.135V | Not Qualified | 2.5/3.33.3V | 3.465V | 3-STATE | 3.1ns | 18Mb 256K x 72 | Volatile | 0.6mA | 3.135V~3.465V | 256KX72 | 72 | 18874368 bit | 200MHz | 0.075A | COMMON | 3.14V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W631GG6KB12I | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | Obsolete | 3 (168 Hours) | 96 | EAR99 | 1.5V | 1 | 13mm | ROHS3 Compliant | 96 | AUTO/SELF REFRESH | 96-TFBGA | 1 Gb | Surface Mount | -40°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | 280mA | 1.6GHz | BOTTOM | NOT SPECIFIED | 1.5V | NOT SPECIFIED | 96 | 0.8mm | 1.425V | Not Qualified | 1.575V | 3-STATE | 20ns | 1Gb 64M x 16 | Volatile | 16b | 1.425V~1.575V | 64MX16 | 16 | 800MHz | 0.014A | COMMON | 8192 | DRAM | Parallel | 8 | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V26L55G | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | 2005 | Active | 70°C | 0°C | 3.3V | 2 | 27.94mm | RoHS Compliant | Contains Lead | No | 84 | Parallel | 3.6V | 3V | 256 kb | 27.94mm | 3.68mm | 120mA | 55 ns | RAM, SRAM | 28b | Asynchronous | 16b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V65602S150BG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 119-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65602 | 119-PBGA (14x22) | 3.8ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 150MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3577YS85PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2006 | 3 (168 Hours) | 100 | 70°C | 0°C | Non-RoHS Compliant | LQFP | Parallel | not_compliant | CMOS | SYNCHRONOUS | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 3.3V | COMMERCIAL | YES | 0.635mm | R-PQFP-G100 | SRAMs | Not Qualified | 3.3V | 3-STATE | RAM, SRAM | 0.18mA | 128KX36 | 36 | 4718592 bit | 87MHz | 0.03A | 8.5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62256VNLL-70SNXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | MoBL® | yes | Obsolete | 3 (168 Hours) | 28 | EAR99 | 3V | 1 | ROHS3 Compliant | Lead Free | No | 28 | 28-SOIC (0.295, 7.50mm Width) | No SVHC | 256 kb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 2.794mm | 1 | 30mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3V | 30 | CY62256 | 2.7V | 3.6V | 3-STATE | 256Kb 32K x 8 | Volatile | 15b | 2.7V~3.6V | 32KX8 | 8 | Asynchronous | 0.000006A | 70 ns | 8b | COMMON | SRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MTFC32GJTED-4M IT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | e•MMC™ | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 169-VFBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | MTFC32G | 256Gb 32G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M48Z128-70PM1 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | Obsolete | 1 (Unlimited) | 32 | Through Hole | EAR99 | 5V | 1 | 42.8mm | ROHS3 Compliant | Lead Free | 32 | 10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP | 32-DIP Module (0.600, 15.24mm) | No SVHC | 1 Mb | 70GHz | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 9.52mm | 1 | 105mA | e3 | MATTE TIN | DUAL | 225 | 5V | NOT SPECIFIED | M48Z128 | 32 | 2.54mm | SRAMs | Not Qualified | 5V | 3-STATE | 1Mb 128K x 8 | Non-Volatile | 4.75V~5.5V | 128KX8 | 8 | 8b | 0.004A | 70 ns | 8b | YES | NVSRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75602S166BG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel | 2012 | no | Active | 3 (168 Hours) | 119 | 70°C | 0°C | 2.5V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 2.625V | 2.375V | 18 Mb | 166MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 245mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 119 | COMMERCIAL | SRAMs | 3-STATE | 3.5 ns | RAM, SRAM | 19b | Synchronous | 0.04A | 36b | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M29W320DB70N6 | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 1998 | no | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 18.4mm | ROHS3 Compliant | No | 48 | BOTTOM BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | 32 Mb | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 10mA | e0 | TIN LEAD | DUAL | 235 | 3.3V | 30 | M29W320 | 48 | 0.5mm | 2.7V | 3.3V | 3.6V | 32Mb 4M x 8 2M x 16 | Non-Volatile | 2.7V~3.6V | 2MX16 | 16 | Asynchronous | 0.0001A | 70 ns | 8 | 3V | YES | YES | YES | 12163 | YES | YES | FLASH | Parallel | 70ns | 16K8K32K64K | BOTTOM | |||||||||||||||||||||||||||||||||||||||||||||
 |
IS43R16320D-5BL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 60 | 1 | 13mm | ROHS3 Compliant | 60 | AUTO/SELF REFRESH | 60-TFBGA | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 1 | e3 | MATTE TIN | BOTTOM | 225 | 2.6V | NOT SPECIFIED | YES | 1mm | 2.5V | Not Qualified | 2.6V | 2.7V | 3-STATE | 700ps | 512Mb 32M x 16 | Volatile | 0.43mA | 2.5V~2.7V | 32MX16 | 16 | 536870912 bit | 16b | 200MHz | 0.025A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W19B320ABT7H | Winbond Electronics | 1.1169 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2005 | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 18.4mm | ROHS3 Compliant | Lead Free | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | 32 Mb | 70GHz | 12mm | Surface Mount | -20°C~85°C TA | CMOS | 1.2mm | 8542.32.00.51 | 1 | e3 | MATTE TIN | DUAL | 260 | 3V | 40 | 48 | YES | 0.5mm | 2.7V | 3/3.3V | 3.6V | 32Mb 4M x 8 2M x 16 | Non-Volatile | 0.045mA | 2.7V~3.6V | 2MX16 | 16 | 0.000005A | 70 ns | 8 | 3V | YES | YES | YES | 863 | YES | YES | FLASH | Parallel | 70ns | 8K64K | BOTTOM | |||||||||||||||||||||||||||||||||||||||||||||||
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7134SA45J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | Active | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 19mm | 3.63mm | 240mA | 45 ns | 4kB | RAM, SDR, SRAM | 24b | Asynchronous | 8b |
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