Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CY7C1302DV25-167BZXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tray | 2000 | yes | Obsolete | 3 (168 Hours) | 165 | 2.5V | 2 | 15mm | ROHS3 Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 9 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR | 1.4mm | 1 | 500mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 2.5V | 30 | 165 | 1mm | 3-STATE | 2.5 ns | 9Mb 512K x 18 | Volatile | 18b | 2.4V~2.6V | 18 | Synchronous | 167MHz | 18b | SEPARATE | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CAT24C256XE-T2 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | yes | Obsolete | 3 (168 Hours) | 8 | 5.255mm | ROHS3 Compliant | 100 YEAR DATA RETENTION | 8-SOIC (0.209, 5.30mm Width) | 5.23mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 2.03mm | 1 | e3 | MATTE TIN | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | 8 | YES | 1.27mm | R-PDSO-G8 | 2.5V | COMMERCIAL | 5.5V | 500ns | 256Kb 32K x 8 | Non-Volatile | 2.5V~5.5V | 32KX8 | 8 | 262144 bit | SERIAL | 1MHz | 5ms | I2C | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25FL129P0XNFV001 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tube | 2007 | FL-P | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | ROHS3 Compliant | No | 8 | 8-WDFN Exposed Pad | SPI, Serial | 128 Mb | Surface Mount | -40°C~105°C TA | FLASH - NOR | 1 | 38mA | e3 | Matte Tin (Sn) | DUAL | 3V | 1.27mm | 2.7V | 3/3.3V | 3.3V | 8 ns | 128Mb 16M x 8 | Non-Volatile | 1b | 2.7V~3.6V | 8 | Synchronous | 104MHz | 0.00001A | 1b | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 50ms | 3V | 256B | SPI | FLASH | SPI - Quad I/O | 5μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
IDT71V3576S150PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | not_compliant | 150MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.295mA | 128KX36 | 36 | 4718592 bit | 0.03A | 3.8 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
TE28F160C3TD70A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2003 | Obsolete | 2 (1 Year) | 85°C | -40°C | Non-RoHS Compliant | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | Parallel | 3.6V | 2.7V | 16 Mb | Surface Mount | -40°C~85°C TA | FLASH - Boot Block | 18mA | 28F160C3 | 48-TSOP I | 70ns | 16Mb 1M x 16 | Non-Volatile | 20b | 2.7V~3.6V | Asynchronous | 16b | FLASH | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL256P11FFI023 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | GL-P | Active | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | ROHS3 Compliant | Lead Free | No | 64 | 64-LBGA | 256 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | 110mA | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | 260 | 3V | 40 | 1mm | 2.7V | 3/3.3V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 2.7V~3.6V | 256MX1 | 1 | Asynchronous | 8b | 0.000005A | 110 ns | 8 | 3V | YES | YES | YES | 256 | 8/16words | YES | YES | FLASH | Parallel | 110ns | 128K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT47H256M8THN-3:H | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2002 | yes | Obsolete | 3 (168 Hours) | 63 | 1.8V | ROHS3 Compliant | Lead Free | No | 63 | 63-TFBGA | 2 Gb | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | 667MHz | BOTTOM | 260 | 1.8V | 30 | MT47H256M8 | 0.8mm | 3-STATE | 450ps | 2Gb 256M x 8 | Volatile | 17b | 0.192mA | 1.7V~1.9V | 256MX8 | 8 | 8b | 333MHz | 0.014A | COMMON | 8192 | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS25WD020-JBLE | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 3 (168 Hours) | 8 | 1.8V | RoHS Compliant | 8 | 8-SOIC (0.209, 5.30mm Width) | SPI, Serial | 2 Mb | Surface Mount | 540.001716mg | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 5mA | 2.16mm | 1 | DUAL | 1.8V | YES | 1.27mm | 1.65V | Not Qualified | 1.95V | 2Mb 256K x 8 | Non-Volatile | 18b | 1.65V~1.95V | 8 | 8b | 80MHz | 0.00001A | 20 | 200000 Write/Erase Cycles | HARDWARE/SOFTWARE | 256B | SPI | FLASH | SPI | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
EM63A165BM-5IH | Etron Technology, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 54 | EAR99 | 1 | 8mm | RoHS Compliant | AUTO/SELF REFRESH | 54-TFBGA | compliant | 8mm | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.8mm | S-PBGA-B54 | 3V | 3.6V | 4.5ns | 256Mb 16M x 16 | Volatile | 3V~3.6V | 16MX16 | 16 | 268435456 bit | 200MHz | DRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
70T651S10BCI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | Active | 3 (168 Hours) | Non-RoHS Compliant | 256-LBGA | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT70T651 | 256-CABGA (17x17) | 10ns | 9Mb 256K x 36 | Volatile | 2.4V~2.6V | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT28F800B5WP-8 BET | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2002 | yes | Obsolete | 2 (1 Year) | 48 | EAR99 | 18.4mm | ROHS3 Compliant | BOTTOM BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | MATTE TIN | DUAL | 260 | 5V | 30 | MT28F800B5 | 48 | YES | 0.5mm | R-PDSO-G48 | 4.5V | Not Qualified | 5V | 5.5V | 8Mb 1M x 8 512K x 16 | Non-Volatile | 0.055mA | 4.5V~5.5V | 512KX16 | 16 | 8388608 bit | 0.000005A | 80 ns | 8 | 5V | NO | NO | YES | 1217 | FLASH | Parallel | 80ns | 16K8K96K128K | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT71V3558S200BQ | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V3558 | 165-CABGA (13x15) | 3.2ns | 4.5Mb 256K x 18 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
7026S20J8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 84-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7026 | 84-PLCC (29.21x29.21) | 20ns | 256Kb 16K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
S29NS512P0PBJW003 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 64 | 3A991.B.1.A | 9.2mm | ROHS3 Compliant | 8mm | CMOS | SYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | NOR TYPE | e1 | TIN SILVER COPPER | BOTTOM | BALL | 260 | 1.8V | 40 | OTHER | YES | 0.5mm | R-PBGA-B64 | 1.7V | 85°C | -25°C | Flash Memories | Not Qualified | 1.8V | 1.95V | 0.08mA | 32MX16 | 16 | 536870912 bit | FLASH | PARALLEL | 0.00007A | 80 ns | 1.8V | YES | YES | YES | 512 | YES | 64K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL512S10DHSS13 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tape & Reel (TR) | GL-S | Active | 3 (168 Hours) | ROHS3 Compliant | 64 | 64-LBGA | Surface Mount | 0°C~85°C TA | FLASH - NOR | 100ns | 512Mb 32M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GD25Q20CSIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 2Mb 256K x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
AT25DF011-XMHN-T | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | Lead Free | 8 | 8-TSSOP (0.173, 4.40mm Width) | SPI, Serial | 8 Mb | 3mm | Surface Mount | -40°C~85°C TC | CMOS | SYNCHRONOUS | 1.2mm | 1 | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | 0.65mm | 1.7V | 3.6V | 8 ns | 1Mb 128K x 8 | Non-Volatile | 1.65V~3.6V | 1MX1 | 1 | 104MHz | 256B | FLASH | SPI | 8μs, 3.5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT29F4G16ABCHC-ET:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 2 (1 Year) | ROHS3 Compliant | 63-VFBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | MT29F4G16 | 4Gb 256M x 16 | Non-Volatile | 1.7V~1.95V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
AS4C64M16MD1-6BINTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2011 | Obsolete | 3 (168 Hours) | 85°C | -40°C | 1.8V | RoHS Compliant | 60 | 60-TFBGA | Parallel | 1 Gb | 166MHz | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | 166MHz | 60-FBGA (8x10) | 5ns | 1Gb 64M x 16 | Volatile | 14b | 1.7V~1.95V | 166MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT29F16G08AJADAWP-IT:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Tape & Reel (TR) | 2013 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NAND | MT29F16G08 | 16Gb 2G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
N25Q032A13EF4A0F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2016 | Obsolete | 3 (168 Hours) | 8 | 4mm | ROHS3 Compliant | 8-UDFN Exposed Pad | 3mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | SYNCHRONOUS | 0.6mm | 1 | DUAL | 3V | YES | 0.8mm | R-PDSO-N8 | 2.7V | 3.6V | 32Mb 8M x 4 | Non-Volatile | 2.7V~3.6V | 32MX1 | 1 | 33554432 bit | SERIAL | 108MHz | 3V | FLASH | SPI | 8ms, 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
6116LA20SOG | Integrated Device Technology (IDT) | 3.3661 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2013 | yes | Active | 1 (Unlimited) | 24 | EAR99 | 70°C | 0°C | 5V | 1 | 15.4mm | RoHS Compliant | Lead Free | No | 24 | SOIC | Parallel | 5.5V | 4.5V | 16 kb | 7.6mm | 2.34mm | CMOS | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 5V | 30 | 24 | COMMERCIAL | YES | SRAMs | 5V | 3-STATE | 20 ns | 2kB | RAM, SDR, SRAM - Asynchronous | 11b | 2KX8 | 0.00003A | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
71T75602S133PFG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71T75 | 100-TQFP (14x14) | 4.2ns | 18Mb 512K x 36 | Volatile | 2.375V~2.625V | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT29F2G16ABAEAWP-IT:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 3 Weeks | Surface Mount | Bulk | 2012 | Obsolete | 3 (168 Hours) | 48 | 3.3V | 18.4mm | ROHS3 Compliant | Tin | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | 2 Gb | Surface Mount | -40°C~85°C TA | FLASH - NAND | 1.2mm | 1 | 35mA | DUAL | 3.3V | MT29F2G16 | 0.5mm | 2.7V | 3.6V | 2Gb 128M x 16 | Non-Volatile | 28b | 2.7V~3.6V | 128MX16 | 16 | Asynchronous | 0.0001A | 25 ns | 16b | 2.7V | NO | NO | YES | 2K | 1Kwords | YES | FLASH | Parallel | 64K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
W25Q256FVBIG TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | SpiFlash® | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 24-TBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | 256Mb 32M x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O, QPI | 50μs, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
AT28HC64B-90SU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Surface Mount | Tube | 1997 | yes | Active | 3 (168 Hours) | 28 | 5V | 17.9mm | ROHS3 Compliant | Lead Free | Tin | 28 | 28-SOIC (0.295, 7.50mm Width) | Parallel, SPI | 64 kb | 90GHz | 7.5mm | Surface Mount | -40°C~85°C TC | CMOS | ASYNCHRONOUS | 2.65mm | 1 | 40mA | e3 | DUAL | 250 | 5V | 40 | AT28HC64 | 1.27mm | Not Qualified | 5V | 90ns | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 8KX8 | 8 | 0.0001A | 10 | 100000 Write/Erase Cycles | 10ms | 5V | YES | YES | 64words | EEPROM | Parallel | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
71V416L15PHG8 | Renesas Electronics America Inc. | 8.2617 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V416 | 4Mb 256K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46R86400D-6BLA1-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 60 | 1 | 13mm | ROHS3 Compliant | 60 | AUTO/SELF REFRESH | 60-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 1 | e3 | MATTE TIN | BOTTOM | 225 | 2.5V | NOT SPECIFIED | YES | 1mm | 2.3V | Not Qualified | 2.5V | 2.7V | 3-STATE | 700ps | AEC-Q100 | 512Mb 64M x 8 | Volatile | 0.37mA | 2.3V~2.7V | 64MX8 | 8 | 536870912 bit | 8b | 166MHz | 0.025A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CYD02S36VA-167BBC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2004 | Obsolete | 3 (168 Hours) | 256 | 3.3V | 2 | 17mm | Non-RoHS Compliant | Contains Lead | No | 256 | PIPELINED ARCHITECTURE OR FLOW-THROUGH | 256-LBGA | 2.3 Mb | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | 1.7mm | 1 | 300mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 3.3V | 30 | CYD02S36 | 256 | 1mm | 3.135V | 3.465V | 3-STATE | 4.4ns | 2Mb 64K x 36 | Volatile | 32b | 1.7V~1.9V | 64KX36 | 36 | Synchronous | 167MHz | 0.075A | 36b | COMMON | 1.7V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
AT49BV001A-55VI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-TFSOP (0.488, 12.40mm Width) | Surface Mount | -40°C~85°C TC | AT49BV001 | 55ns | 1Mb 128K x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 50μs |
-
CY7C1302DV25-167BZXC Cypress Semiconductor Corp
Surface Mount 165 Pin Memory IC 9 Mb kb 15mm mm 500mA mA 18b b
Price: 0.0000
RFQ -
-
S25FL129P0XNFV001 Cypress Semiconductor Corp
3/3.3V V Surface Mount FL-P Memory IC FL-P Series 128 Mb kb 38mA mA 1b b
Price: 0.0000
RFQ -
IDT71V3576S150PF8 Integrated Device Technology (IDT)
3.3V V 100 Pin Memory IC 20mm mm
Price: 0.0000
RFQ -
TE28F160C3TD70A Micron Technology Inc.
Surface Mount Memory IC 28F160C3 16 Mb kb 18mA mA 16b b
Price: 0.0000
RFQ -
S29GL256P11FFI023 Cypress Semiconductor Corp
3/3.3V V Surface Mount GL-P Memory IC GL-P Series 256 Mb kb 13mm mm 110mA mA
Price: 0.0000
RFQ -
MT47H256M8THN-3:H Micron Technology Inc.
Surface Mount Memory IC MT47H256M8 2 Gb kb
Price: 0.0000
RFQ -
-
-
-
MT28F800B5WP-8 BET Micron Technology Inc.
5V V 48 Pin Memory IC MT28F800B5 18.4mm mm
Price: 0.0000
RFQ -
-
-
-
-
-
-
-
-
-
-
6116LA20SOG Integrated Device Technology (IDT)
5V V 24 Pin Memory IC 16 kb kb 15.4mm mm
Price: 3.3661
RFQ -
-
MT29F2G16ABAEAWP-IT:E Micron Technology Inc.
Surface Mount Memory IC MT29F2G16 2 Gb kb 18.4mm mm 35mA mA 16b b
Price: 0.0000
RFQ -
-
AT28HC64B-90SU Microchip Technology
5V V Surface Mount Memory IC AT28HC64 64 kb kb 17.9mm mm 40mA mA
Price: 0.0000
RFQ -
-
IS46R86400D-6BLA1-TR ISSI, Integrated Silicon Solution Inc
2.5V V Memory IC 13mm mm
Price: 0.0000
RFQ -
CYD02S36VA-167BBC Cypress Semiconductor Corp
Surface Mount 256 Pin Memory IC CYD02S36 2.3 Mb kb 17mm mm 300mA mA 36b b
Price: 0.0000
RFQ -




.png)













Need Help?

