Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
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.png "S34ML01G204TFA013") |
S34ML01G204TFA013 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 48 | 18.4mm | RoHS Compliant | 12mm | CMOS | ASYNCHRONOUS | 1.2mm | 1 | DUAL | GULL WING | NOT SPECIFIED | 3.3V | NOT SPECIFIED | INDUSTRIAL | YES | 0.5mm | R-PDSO-G48 | 2.7V | 85°C | -40°C | 3.6V | 64MX16 | 16 | 1073741824 bit | FLASH | PARALLEL | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT27BV1024-12VC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1998 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 40-TFSOP (0.488, 12.40mm Width) | Surface Mount | 0°C~70°C TC | EPROM - OTP | AT27BV1024 | 120ns | 1Mb 64K x 16 | Non-Volatile | 2.7V~3.6V 4.5V~5.5V | EPROM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75802S100BGGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | 2012 | yes | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 2.5V | 1 | 14mm | RoHS Compliant | Lead Free | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 2.625V | 2.375V | 18 Mb | 100MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 195mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 2.5V | 30 | 119 | INDUSTRIAL | SRAMs | Not Qualified | 3-STATE | 5 ns | 100MHz | 2.3MB | RAM, SDR, SRAM | 20b | Synchronous | 0.06A | 18b | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7164S25YGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2009 | yes | Active | 3 (168 Hours) | 28 | EAR99 | 85°C | -40°C | 5V | 1 | 17.9mm | RoHS Compliant | Lead Free | No | 28 | Parallel | 5.5V | 4.5V | 64 kb | 7.6mm | 2.67mm | CMOS | 3.556mm | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 5V | 28 | INDUSTRIAL | YES | SRAMs | 5V | 3-STATE | 25 ns | 8kB | RAM, SDR, SRAM - Asynchronous | 13b | 8KX8 | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V05S55J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2006 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 3.3V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | PLCC | Parallel | 3.6V | 3V | 64 kb | 24mm | 3.63mm | CMOS | 1 | 180mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 68 | COMMERCIAL | SRAMs | 3-STATE | 55 ns | 8kB | RAM, SDR, SRAM | 26b | 8KX8 | Asynchronous | 0.005A | 8b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71421LA20J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 16 kb | 19mm | 3.63mm | CMOS | 1 | 200mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 20 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CP7505AT | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93C86AT-I/MS | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 3mm | ROHS3 Compliant | No | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Serial | 16 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.1mm | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 40 | 93C86A | 8 | 0.65mm | 5V | 16Kb 2K x 8 | Non-Volatile | 4.5V~5.5V | 1KX16 | 16 | 3MHz | 0.000001A | 8 | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 2ms | MICROWIRE | EEPROM | SPI | 2ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V67602S166BGG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 119-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V67602 | 119-PBGA (14x22) | 3.5ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V424S10YG8 | Renesas Electronics America Inc. | 6.4093 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 36-BSOJ (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V424 | 36-SOJ | 10ns | 4Mb 512K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7134LA45J8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 52-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7134 | 52-PLCC (19.13x19.13) | 45ns | 32Kb 4K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC66BXT-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 8-SOIC (0.154, 3.90mm Width) | Serial | 4 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 2mA | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | 40 | 93LC66B | 8 | 1.27mm | 2.5V | 3/5V | 5.5V | 3-STATE | 250 ns | 4Kb 256 x 16 | Non-Volatile | 2.5V~5.5V | 256X16 | 16 | 2MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC32A-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 9.27mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-DIP (0.300, 7.62mm) | I2C, Serial | 32 kb | 7.62mm | Through Hole | -40°C~125°C TA | CMOS | 5.33mm | 1 | 3mA | e3 | DUAL | 5V | 24LC32A | 8 | 2.54mm | 2.5V | 3/5V | 5.5V | 900ns | 32Kb 4K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C02B-TH-T | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | 8-TSSOP | 550ns | 2Kb 256 x 8 | Non-Volatile | 1.8V~5.5V | 1MHz | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT25QL256ABA1EW7-0SIT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 256Mb 32M x 8 | Non-Volatile | 2.7V~3.6V | 133MHz | FLASH | SPI | 8ms, 2.8ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C024-25JXI | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | yes | Obsolete | 3 (168 Hours) | 84 | 29.3116mm | ROHS3 Compliant | 84-LCC (J-Lead) | unknown | 29.3116mm | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 5.08mm | 1 | e3 | MATTE TIN | QUAD | 260 | 5V | 20 | 84 | YES | 1.27mm | S-PQCC-J84 | 4.5V | COMMERCIAL | 5.5V | 64Kb 4K x 16 | Volatile | 4.5V~5.5V | 4KX16 | 16 | 65536 bit | 25 ns | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1354SV25-166BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tray | 1996 | Active | 3 (168 Hours) | Non-RoHS Compliant | 0°C~70°C TA | SRAM - Synchronous, SDR | CY7C1354 | 3.5ns | 9Mb 256K x 36 | Volatile | 2.375V~2.625V | 166MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48LC4M16A2P-6:G TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 54-TSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SDRAM | MT48LC4M16A2 | 5.5ns | 64Mb 4M x 16 | Volatile | 3V~3.6V | 167MHz | DRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
71256S35TDB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Bulk | 2011 | Active | 125°C | -55°C | 5V | 1 | 37.72mm | RoHS Compliant | Contains Lead | No | 28 | CDIP | Parallel | 5.5V | 4.5V | 256 kb | 7.62mm | 3.56mm | 35 ns | 32kB | RAM, SDR, SRAM - Asynchronous | 15b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M28W160CB90N6 | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1998 | Obsolete | 3 (168 Hours) | 48 | ROHS3 Compliant | 48 | 48-TFSOP (0.724, 18.40mm Width) | unknown | Surface Mount | -40°C~85°C TA | FLASH - NOR | DUAL | M28W160 | YES | 0.5mm | Not Qualified | 3/3.3V | 2.7V | 16Mb 1M x 16 | Non-Volatile | 0.02mA | 2.7V~3.6V | 1MX16 | 16 | 16777216 bit | 0.000005A | 90 ns | NO | NO | YES | 831 | YES | FLASH | Parallel | 90ns | 4K32K | BOTTOM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48V8M16LFF4-8 IT:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2009 | Obsolete | 2 (1 Year) | 54 | EAR99 | 1 | 8mm | Non-RoHS Compliant | AUTO/SELF REFRESH | 54-VFBGA | not_compliant | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPSDR | SYNCHRONOUS | 1mm | 8542.32.00.02 | 1 | e0 | TIN LEAD SILVER | BOTTOM | 235 | 2.5V | 30 | MT48V8M16 | 54 | YES | 0.8mm | S-PBGA-B54 | 2.3V | Not Qualified | 1.8/2.52.5V | 2.7V | 3-STATE | 7ns | 128Mb 8M x 16 | Volatile | 0.13mA | 2.3V~2.7V | 8MX16 | 16 | 134217728 bit | 125MHz | 0.00045A | COMMON | 4096 | DRAM | Parallel | 15ns | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
24LC22A-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2 Weeks | Surface Mount | Tube | 2001 | yes | Active | 3 (168 Hours) | 8 | EAR99 | 2.5V | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | 2 kb | 1.5mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | 40 | 24LC22A | 8 | 1.27mm | 3/5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 2.5V~5.5V | 400kHz | 0.00003A | 200 | 1000000 Write/Erase Cycles | 10ms | I2C | 1010000R | EEPROM | I2C | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS7C31024B-20JCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2002 | yes | Active | 3 (168 Hours) | 32 | 20.955mm | ROHS3 Compliant | 32 | 32-BSOJ (0.400, 10.16mm Width) | 10.16mm | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 3.683mm | 1 | e3/e6 | PURE MATTE TIN/TIN BISMUTH | DUAL | 245 | 3.3V | 40 | 32 | YES | 1.27mm | 3V | 3.6V | 1Mb 128K x 8 | Volatile | 3V~3.6V | 128KX8 | 8 | 1048576 bit | 20 ns | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7005L17J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2012 | Active | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | PLCC | Parallel | 5.5V | 4.5V | 64 kb | 24mm | 3.63mm | 260mA | 17 ns | 8kB | RAM, SDR, SRAM | 26b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C019V-15AXC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 100 | 14mm | ROHS3 Compliant | 100-LQFP | unknown | 14mm | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 1.6mm | 1 | QUAD | 3.3V | 100 | YES | 0.5mm | S-PQFP-G100 | 3V | COMMERCIAL | 3.6V | 1.152Mb 128K x 9 | Volatile | 3V~3.6V | 128KX9 | 9 | 1179648 bit | 15 ns | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RC28F512M29EWHA | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2013 | no | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 13mm | Non-RoHS Compliant | No | 64 | 64-LBGA | 512 Mb | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | 31mA | e0 | TIN LEAD SILVER | BOTTOM | 235 | 3V | 30 | 28F512M29EW | 64 | 1mm | 2.7V | 3/3.3V | 3.6V | 512Mb 64M x 8 32M x 16 | Non-Volatile | 2.7V~3.6V | 32MX16 | 16 | Asynchronous | 0.000225A | 100 ns | 8 | 3V | YES | YES | YES | 512 | 16/32words | YES | YES | FLASH | Parallel | 100ns | 128K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W25Q16JVZPIQ | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tube | 2016 | SpiFlash® | Active | 3 (168 Hours) | 8 | EAR99 | 6mm | ROHS3 Compliant | 8-WDFN Exposed Pad | 5mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 0.8mm | 8542.32.00.51 | 1 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-N8 | 2.7V | 3.6V | 16Mb 2M x 8 | Non-Volatile | 2.7V~3.6V | 2MX8 | 8 | 16777216 bit | SERIAL | 133MHz | 3V | FLASH | SPI - Quad I/O | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V3599S166BF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 3.3V | 2 | 15mm | RoHS Compliant | Contains Lead | No | 208 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 3.45V | 3.15V | 4.5 Mb | 166MHz | 15mm | 1.4mm | CMOS | 1.7mm | 1 | 500mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 3.3V | 208 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 20 ns | 512kB | RAM, SDR, SRAM | 34b | Synchronous | 0.03A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S32800D-6B | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | no | Obsolete | 2 (1 Year) | 90 | EAR99 | 3.3V | 1 | 13mm | Non-RoHS Compliant | 90 | AUTO/SELF REFRESH | 90-TFBGA | 256 Mb | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 90 | YES | 0.8mm | 3V | Not Qualified | 3.6V | 5.4ns | 256Mb 8M x 32 | Volatile | 13b | 0.35mA | 3V~3.6V | 8MX32 | 32 | 32b | 166MHz | 0.003A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61LV12824-10TQLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | yes | Active | 3 (168 Hours) | 100 | 3.3V | 1 | 20mm | ROHS3 Compliant | No | 100 | 100-LQFP | 3 Mb | Surface Mount | 657.000198mg | -40°C~85°C TA | SRAM - Asynchronous | 210mA | 1 | 210mA | e3 | Matte Tin (Sn) - annealed | QUAD | 260 | 3.3V | 40 | 100 | YES | 0.65mm | 2.97V | 3.63V | 3-STATE | 3Mb 128K x 24 | Volatile | 17b | 3.135V~3.6V | 24 | Asynchronous | 0.02A | 24b | COMMON | 3V | SRAM | Parallel | 10ns |
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