Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Number of Sectors/Size | Page Size | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IS61QDB42M18-250M3L | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | yes | Discontinued | 2 (1 Year) | 165 | 3A991.B.2.A | 17mm | ROHS3 Compliant | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 15mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QUAD | 1.7mm | 8542.32.00.41 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 40 | 165 | YES | 1mm | 1.71V | Not Qualified | 1.5/1.81.8V | 1.89V | 3-STATE | 7.5ns | 36Mb 2M x 18 | Volatile | 0.5mA | 1.71V~1.89V | 2MX18 | 18 | 37748736 bit | 250MHz | 0.2A | SEPARATE | 1.7V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "S34MS04G200BHV000") |
S34MS04G200BHV000 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 63 | 11mm | RoHS Compliant | 9mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | INDUSTRIAL | YES | 0.8mm | R-PBGA-B63 | 1.7V | 105°C | -40°C | 1.95V | 512MX8 | 8 | 4294967296 bit | FLASH | PARALLEL | 1.8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT70825S25G | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 84-BPGA | Through Hole | 0°C~70°C TA | SARAM | IDT70825 | 128Kb 8K x 16 | Volatile | 4.5V~5.5V | RAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS4C32M16D1-5TCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2013 | yes | Obsolete | 3 (168 Hours) | 66 | EAR99 | 2.5V | 1 | 22.22mm | RoHS Compliant | Lead Free | No | 66 | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | 512 Mb | Surface Mount | 0°C~70°C TA | SDRAM - DDR | 1.2mm | 8542.32.00.28 | 1 | DUAL | 2.5V | 66 | YES | 0.65mm | 2.3V | 2.7V | 700ps | 512Mb 32M x 16 | Volatile | 13b | 2.3V~2.7V | 32MX16 | 16 | 16b | 200MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43R86400D-5TL | ISSI, Integrated Silicon Solution Inc | 5.7840 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Surface Mount | Tray | yes | Active | 3 (168 Hours) | 66 | EAR99 | 1 | 22.22mm | ROHS3 Compliant | 66 | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | 512 Mb | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | 430mA | e3 | MATTE TIN | DUAL | 260 | 2.6V | 40 | 66 | 0.65mm | 2.5V | Not Qualified | 2.6V | 2.7V | 3-STATE | 700ps | 512Mb 64M x 8 | Volatile | 15b | 2.5V~2.7V | 64MX8 | 8 | 8b | 200MHz | 0.025A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT51K256M32HF-60 N:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Box | Active | Surface Mount | 0°C~95°C TC | SGRAM - GDDR5 | 8Gb 256M x 32 | Volatile | 1.3V~1.545V | 1.5GHz | RAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M48Z512A-70PM1 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | Obsolete | 1 (Unlimited) | 32 | 3A991.B.2.A | 5V | 1 | 42.8mm | ROHS3 Compliant | 32 | 10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP | 32-DIP Module (0.600, 15.24mm) | 4 Mb | 70GHz | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 115mA | ASYNCHRONOUS | 9.52mm | 1 | 115mA | e3 | MATTE TIN | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | M48Z512 | 32 | 2.54mm | SRAMs | Not Qualified | 5V | 3-STATE | 4Mb 512K x 8 | Non-Volatile | 4.75V~5.5V | 512KX8 | 8 | 8b | 0.005A | 70 ns | 8b | YES | NVSRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT45W512KW16PEGA-70 IT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2008 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-VFBGA | Surface Mount | -40°C~85°C TC | PSRAM (Pseudo SRAM) | MT45W512KW16 | 48-VFBGA (6x8) | 70ns | 8Mb 512K x 16 | Volatile | 1.7V~1.95V | PSRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MTFC2GMTEA-WT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2010 | e•MMC™ | Obsolete | 3 (168 Hours) | 153 | ROHS3 Compliant | 153 | 153-WFBGA | 16 Gb | Surface Mount | -25°C~85°C TA | 3.3V | FLASH - NAND | BOTTOM | MTFC2G | YES | 0.5mm | Other Memory ICs | Not Qualified | 3.3V | 16Gb 2G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V416S12BE | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2012 | no | Active | 4 (72 Hours) | 48 | 70°C | 0°C | 3.3V | 1 | 9mm | RoHS Compliant | Contains Lead | No | 48 | TFBGA | Parallel | 3.6V | 3V | 4 Mb | 9mm | 1.2mm | CMOS | 1 | 180mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 48 | COMMERCIAL | 12 ns | 512kB | RAM, SDR, SRAM - Asynchronous | 18b | Asynchronous | 16b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F4G08ABAFAWP-AITES:F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NAND | 4Gb 512M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT48LC4M16A2B4-7E:J TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 54-VFBGA | Surface Mount | 0°C~70°C TA | SDRAM | MT48LC4M16A2 | 5.4ns | 64Mb 4M x 16 | Volatile | 3V~3.6V | 133MHz | DRAM | Parallel | 14ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CYD18S72V18-167BGC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2005 | no | Obsolete | 3 (168 Hours) | 484 | 1.8V | 2 | Non-RoHS Compliant | No | 484 | PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V | 484-FBGA | 18 Mb | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | 1 | 880mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 1.5V | CYD18S72 | 484 | 1mm | 1.58V | 3-STATE | 4ns | 18Mb 256K x 72 | Volatile | 18b | 1.42V~1.58V 1.7V~1.9V | 72 | Synchronous | 167MHz | 0.3A | 72b | COMMON | 1.4V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CAV25020YE-GT3 | ON Semiconductor | 0.4410 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | Surface Mount | Tape & Reel (TR) | 2008 | Automotive, AEC-Q100 | yes | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | Lead Free | Gold | 8 | 8-TSSOP (0.173, 4.40mm Width) | SPI, Serial | 2 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | e4 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | 8 | 0.65mm | 2.5V | 5.5V | 35 ns | 2Kb 256 x 8 | Non-Volatile | 2.5V~5.5V | 8 | 10MHz | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25LC640AT-E/SN16KVAO | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | 8 | 4.9mm | 8-SOIC (0.154, 3.90mm Width) | compliant | 3.9mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.75mm | 1 | DUAL | 5V | 25LC640A | YES | 1.27mm | R-PDSO-G8 | 4.5V | 5.5V | AEC-Q100; TS 16949 | 64Kb 8K x 8 | Non-Volatile | 2.5V~5.5V | 8KX8 | 8 | 65536 bit | SERIAL | 10MHz | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
PC28F00AP33BFA | Micron Technology Inc. | 511.5719 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2013 | Axcell™ | yes | Obsolete | 3 (168 Hours) | 64 | 10mm | ROHS3 Compliant | No | 64 | 64-TBGA | Parallel, Serial | 1 Gb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 1 | 31mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | 28F00AP33 | 64 | YES | 1mm | 2.3V | 1Gb 64M x 16 | Non-Volatile | 26b | 2.3V~3.6V | 16 | Asynchronous | 52MHz | 95 ns | 16b | FLASH | Parallel | 95ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M29F200FB55M3F2 TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2014 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 44-SOIC (0.496, 12.60mm Width) | Surface Mount | -40°C~125°C TA | FLASH - NOR | M29F200 | 2Mb 256K x 8 128K x 16 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71256L20Y | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 28-BSOJ (0.300, 7.62mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71256 | 28-SOJ | 20ns | 256Kb 32K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT29LV1024-15JI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2000 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 44-LCC (J-Lead) | Surface Mount | -40°C~85°C TC | AT29LV1024 | 150ns | 1Mb 64K x 16 | Non-Volatile | 3V~3.6V | FLASH | Parallel | 20ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST26WF080B-104I/MF | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tube | 2013 | SST26 SQI® | Active | 3 (168 Hours) | 8 | 1.8V | 6mm | ROHS3 Compliant | Lead Free | 8 | 8-WDFN Exposed Pad | SPI, Serial | No SVHC | 8 Mb | 5mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 1.8V | 30 | SST26WF080 | YES | 1.27mm | 1.65V | 1.95V | TS 16949 | 8Mb 1M x 8 | Non-Volatile | 1.65V~1.95V | 1 | 104MHz | 256B | FLASH | SPI - Quad I/O | 1.5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MTFC8GAMALNA-AIT | Micron Technology Inc. | 39.9842 |
Min: 1 Mult: 1 |
0.00000000 | 7 Weeks | Tray | e•MMC™ | Active | 100 | 18mm | RoHS Compliant | 100-TBGA | compliant | 14mm | Surface Mount | -40°C~85°C TA | FLASH - NAND | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 30 | YES | 1mm | R-PBGA-B100 | 2.7V | 3.6V | 64Gb 8G x 8 | Non-Volatile | 8GX8 | 8 | 68719476736 bit | PARALLEL | 2.7V | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT44K16M36RB-093E IT:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | 2016 | Active | 3 (168 Hours) | 168 | 1 | 13.5mm | ROHS3 Compliant | AUTO REFRESH | 168-TBGA | 13.5mm | Surface Mount | -40°C~95°C TC | CMOS | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | 1.35V | YES | 1mm | S-PBGA-B168 | 1.28V | 1.42V | 8ns | 576Mb 16M x 36 | Volatile | 1.28V~1.42V | 16MX36 | 36 | 603979776 bit | 1067MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC01BH-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 8 | Through Hole | EAR99 | 5V | 9.271mm | ROHS3 Compliant | Tin | No | 8 | 8-DIP (0.300, 7.62mm) | 2-Wire, I2C, Serial | No SVHC | 1 kb | 7.62mm | Through Hole | -40°C~85°C TA | CMOS | 5.334mm | 1 | 3mA | e3 | DUAL | 4.5V | 24LC01BH | 8 | 2.54mm | 900ns | 1Kb 128 x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010XXXR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7140LA100CB | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tube | Active | 1 (Unlimited) | Non-RoHS Compliant | 48-DIP (0.600, 15.24mm) | Through Hole | -55°C~125°C TA | SRAM - Dual Port, Asynchronous | IDT7140 | 48-SIDE BRAZED | 100ns | 8Kb 1K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY14B104LA-ZS45XIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Active | 3 (168 Hours) | 44 | 3A991.B.2.A | 3V | 18.415mm | ROHS3 Compliant | Gold, Tin | 44 | 44-TSOP (0.400, 10.16mm Width) | 4 Mb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 1.194mm | 8542.32.00.41 | 1 | 52mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3V | 30 | CY14B104 | 44 | 0.8mm | 2.7V | SRAMs | Not Qualified | 3.6V | 4Mb 512K x 8 | Non-Volatile | 2.7V~3.6V | 512KX8 | 8 | 8b | 0.005A | 45 ns | 8b | NVSRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24LC025/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2005 | yes | Active | Not Applicable | 8 | EAR99 | 9.46mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 8-DIP (0.300, 7.62mm) | I2C, Serial | 2 kb | 7.62mm | Through Hole | 0°C~70°C TA | CMOS | 4.32mm | 1 | 3mA | e3 | DUAL | 2.5V | 24LC025 | 8 | 2.54mm | 2.2V | 2.2/5.5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.00005A | 200 | 1000000 Write/Erase Cycles | 10ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RC28F640P30TF65A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2009 | StrataFlash™ | Obsolete | 3 (168 Hours) | 64 | 1.8V | Non-RoHS Compliant | No | 64 | 64-TBGA | Parallel, Serial | 64 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 28mA | BOTTOM | 28F640P30 | 1mm | 1.81.8/3.3V | 64Mb 4M x 16 | Non-Volatile | 22b | 1.7V~2V | 4MX16 | 16 | Asynchronous | 52MHz | 0.000055A | 65 ns | 16b | NO | NO | 463 | 8words | FLASH | Parallel | 65ns | TOP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CG8793AFT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | Vendor Undefined | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT49H16M18CFM-25:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2015 | Discontinued | 3 (168 Hours) | 144 | 1.8V | 1 | 18.5mm | Non-RoHS Compliant | Lead, Silver, Tin | No | 144 | AUTO REFRESH | 144-TFBGA | 288 Mb | Surface Mount | 0°C~95°C TC | CMOS | 1.2mm | 1 | 400MHz | BOTTOM | 1.8V | 1mm | 1.7V | 1.5/1.81.82.5V | 1.9V | 3-STATE | 20ns | 288Mb 16M x 18 | Volatile | 23b | 0.655mA | 1.7V~1.9V | 16MX18 | 18 | 18b | 0.005A | SEPARATE | DRAM | Parallel | 248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F2G08ABAEAWP:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Tape & Reel (TR) | 1997 | Active | 3 (168 Hours) | 48 | 18.4mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | 0°C~70°C TA | FLASH - NAND | ASYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | MT29F2G08 | 48 | YES | 0.5mm | R-PDSO-G48 | 2.7V | 3.6V | 2Gb 256M x 8 | Non-Volatile | 2.7V~3.6V | 256MX8 | 8 | 2147483648 bit | 2.7V | FLASH | Parallel |
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