Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Serial Bus Type | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
7015S12PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 80-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7015 | 80-TQFP (14x14) | 12ns | 72Kb 8K x 9 | Volatile | 4.5V~5.5V | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3558S166PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2006 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 166MHz | 14mm | 1.4mm | CMOS | 1 | 360mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.65mm | SRAMs | 3-STATE | 3.5 ns | 166MHz | 512kB | RAM, SDR, SRAM | 18b | Synchronous | 0.045A | 18b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||
 |
25AA040AT-I/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 19 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.4mm | ROHS3 Compliant | Lead Free | No | 8 | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 8-TSSOP (0.173, 4.40mm Width) | SPI, Serial | 4 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.2mm | 1 | 5mA | e3 | Matte Tin (Sn) | DUAL | 260 | 2.5V | 40 | 25AA040A | 8 | 0.65mm | 50 ns | 4Kb 512 x 8 | Non-Volatile | 1.8V~5.5V | 8 | 10MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||
 |
71321LA55PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | TQFP | Parallel | 5.5V | 4.5V | 16 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 110mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | 0.8mm | SRAMs | 5V | 3-STATE | 55 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||
.png "7007L20G") |
7007L20G | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Bulk | 2010 | Active | 70°C | 0°C | 5V | 2 | 29.46mm | RoHS Compliant | Contains Lead | No | 68 | Parallel | 5.5V | 4.5V | 256 kb | 29.46mm | 3.68mm | 275mA | 20 ns | 32kB | RAM, SDR, SRAM | 30b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70261S20PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | TQFP | Parallel | 5.5V | 4.5V | 256 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 315mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 20 ns | 32kB | RAM, SDR, SRAM | 28b | 16KX16 | Asynchronous | 0.015A | 16b | COMMON | |||||||||||||||||||||||||||||||||||||||||||
 |
70V9369L12PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V9369 | 12ns | 288Kb 16K x 18 | Volatile | 3V~3.6V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W632GU8MB-12 TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 78-VFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3 | 20ns | 2Gb 128M x 16 | Volatile | 1.283V~1.45V | 800MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V25761SA166BQ8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V25761 | 165-CABGA (13x15) | 3.5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS62WV10248EBLL-45BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 48 | 8mm | ROHS3 Compliant | 48 | 48-VFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1mm | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.75mm | 2.2V | 3.6V | 8Mb 1M x 8 | Volatile | 2.2V~3.6V | 1MX8 | 8 | 8388608 bit | 45 ns | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W25Q64CVZEJP | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | SpiFlash® | Obsolete | 3 (168 Hours) | 8 | 8mm | ROHS3 Compliant | 8-WDFN Exposed Pad | 6mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 0.8mm | 1 | DUAL | 3V | YES | 1.27mm | R-PDSO-N8 | 2.7V | 3.6V | AEC-Q100 | 64Mb 8M x 8 | Non-Volatile | 2.7V~3.6V | 8MX8 | 8 | 67108864 bit | SERIAL | 80MHz | 2.7V | FLASH | SPI - Quad I/O | 50μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25DN512C-XMHFGP-B | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tube | 2013 | Active | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | SPI, Serial | 85MHz | Surface Mount | -40°C~85°C TC | FLASH | 8-TSSOP | 512Kb 64K x 8 | Non-Volatile | 2.3V~3.6V | 104MHz | FLASH | SPI | 8μs, 1.75ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7133SA35PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 5.5V | 4.5V | 32 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 295mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 35 ns | 4kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 16b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||
 |
25LC640-I/SNG | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Surface Mount | Tube | 2004 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 64 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 5mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 5V | 40 | 25LC640 | 8 | 1.27mm | 2.5V | 3/5V | 5.5V | 230 ns | 64Kb 8K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 2MHz | 0.000001A | 200 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||
 |
AS4C256M16D3LB-10BIN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 96-TFBGA | Surface Mount | -40°C~95°C TC | SDRAM - DDR3L | 20ns | 4Gb 256M x 16 | Volatile | 1.283V~1.45V | 933MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V124SA20Y8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-BSOJ (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V124 | 32-SOJ | 20ns | 1Mb 128K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1LV0816ASB-7SI#S0 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SRAM | 44-TSOP II | 70ns | 8Mb 512K x 16 | Volatile | 2.4V~3.6V | SRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT28F400B5WG-8 B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | 2002 | Obsolete | 1 (Unlimited) | 48 | EAR99 | 18.4mm | Non-RoHS Compliant | USER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK | 48-TFSOP (0.724, 18.40mm Width) | not_compliant | 12mm | Surface Mount | 0°C~70°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 235 | 5V | 30 | MT28F400B5 | 48 | YES | 0.5mm | R-PDSO-G48 | 4.5V | Not Qualified | 5V | 5.5V | 3-STATE | 4Mb 512K x 8 256K x 16 | Non-Volatile | 0.055mA | 4.5V~5.5V | 256KX16 | 16 | 4194304 bit | 0.000005A | 80 ns | 8 | 5V | NO | NO | YES | 1213 | FLASH | Parallel | 80ns | 16K8K96K128K | BOTTOM | |||||||||||||||||||||||||||||||||||||||
|
71024S20YG8 | Renesas Electronics America Inc. | 4.5877 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 32-BSOJ (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71024 | 1Mb 128K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61LV6416-10TI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | no | Obsolete | 2 (1 Year) | 44 | 3.3V | 1 | Non-RoHS Compliant | No | 44 | LOW POWER STANDBY MODE | 44-TSOP (0.400, 10.16mm Width) | 1 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 3.3V | 44 | YES | 0.8mm | 3.63V | 3-STATE | 1Mb 64K x 16 | Volatile | 16b | 3.135V~3.6V | 16 | COMMON | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3556S166BQGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | 3 (168 Hours) | 165 | 85°C | -40°C | RoHS Compliant | 165 | Parallel | unknown | 166MHz | CMOS | SYNCHRONOUS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 3.3V | INDUSTRIAL | YES | 1mm | SRAMs | Not Qualified | 3.3V | 3-STATE | RAM, SRAM | 0.36mA | 128KX36 | 36 | 4718592 bit | 0.045A | 3.5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T3319S133BF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 2.5V | 2 | 15mm | RoHS Compliant | Contains Lead | No | 208 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 2.6V | 2.4V | 4 Mb | 133MHz | 15mm | 1.4mm | CMOS | 1 | 370mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 208 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 15 ns | RAM, SRAM | 18b | Synchronous | 0.015A | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL256SAGMFNG03 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | FL-S | Active | 3 (168 Hours) | 16 | 3A991.B.1.A | 10.3mm | ROHS3 Compliant | 16 | ALSO CONFIGURABLE AS 256M X 1 | 16-SOIC (0.295, 7.50mm Width) | SPI, Serial | 7.5mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | SYNCHRONOUS | 2.65mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | 2.7V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 2.7V~3.6V | 32MX8 | 8 | 268435456 bit | 133MHz | 500ms | 3V | FLASH | SPI - Quad I/O | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V3569S6BF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2008 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 3.3V | 2 | 15mm | RoHS Compliant | Contains Lead | No | 208 | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | Parallel | 3.45V | 3.15V | 576 kb | 83.3MHz | 15mm | 1.4mm | CMOS | 1 | 310mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 208 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 6 ns | RAM, SRAM | 14b | 16KX36 | Synchronous | 0.015A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||
 |
71V321L55J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 3.3V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | BATTERY BACKUP;AUTOMATIC POWER DOWN | PLCC | Parallel | 3.6V | 3V | 16 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 85mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 52 | COMMERCIAL | SRAMs | 3-STATE | 55 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||
 |
R1LP0108ESA-5SI#B1 | Renesas Electronics America | 17.8879 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Tube | 2013 | yes | Active | 3 (168 Hours) | 32 | ROHS3 Compliant | 32-TFSOP (0.465, 11.80mm Width) | Surface Mount | -40°C~85°C TA | CMOS | ASYNCHRONOUS | 1 | DUAL | 5V | 32 | YES | R-PDSO-G32 | 4.5V | 5.5V | 1Mb 128K x 8 | Volatile | 4.5V~5.5V | 128KX8 | 8 | 1048576 bit | 55 ns | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C64E-20PC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1999 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 28-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TC | EEPROM | AT28C64 | 28-PDIP | 200ns | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 200μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS21ES08G-JCLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | Active | 3 (168 Hours) | 153 | 13mm | ROHS3 Compliant | 153-VFBGA | 11.5mm | Surface Mount | -40°C~85°C TA | FLASH - NAND (MLC) | SYNCHRONOUS | 1mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.5mm | R-PBGA-B153 | 2.7V | 3.6V | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | 8GX8 | 8 | 68719476736 bit | PARALLEL | 200MHz | 3.3V | FLASH | eMMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT45DB021-RC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2000 | Obsolete | 2 (1 Year) | 28 | EAR99 | 18.25mm | Non-RoHS Compliant | HARDWARE DATA PROTECTION | 28-SOIC (0.342, 8.69mm Width) | 8.74mm | Surface Mount | 0°C~70°C TC | CMOS | SYNCHRONOUS | 2.79mm | 8542.32.00.51 | 1 | e0 | TIN LEAD | DUAL | 225 | 3V | 30 | AT45DB021 | YES | 1.27mm | R-PDSO-G28 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 2Mb 264Bytes x 1024 pages | Non-Volatile | 0.035mA | 2.7V~3.6V | 264KX8 | 8 | 2162688 bit | SERIAL | 5MHz | 0.000015A | HARDWARE | 2.7V | SPI | FLASH | SPI | 14ms | ||||||||||||||||||||||||||||||||||||||||||||||
|
7164S25DB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Bulk | 2011 | no | Active | 1 (Unlimited) | 28 | 125°C | -55°C | 5V | 1 | 37.2mm | RoHS Compliant | Contains Lead | No | 28 | CDIP | Parallel | 64 kb | 15.24mm | 1.65mm | CMOS | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | THROUGH-HOLE | 240 | 5V | 28 | MILITARY | NO | 2.54mm | SRAMs | 5V | 3-STATE | MIL-STD-883 Class B | RAM, SRAM - Asynchronous | 13b | 8KX8 | 0.02A | 25 ns | COMMON |
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71V3558S166PFGI Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 4.5 Mb kb 20mm mm 360mA mA 18b b
Price: 0.0000
RFQ -
25AA040AT-I/ST Microchip Technology
Surface Mount 8 Pin Memory IC 25AA040A 4 kb kb 4.4mm mm 5mA mA
Price: 0.0000
RFQ -
71321LA55PF Integrated Device Technology (IDT)
5V V Surface Mount 64 Pin Memory IC 16 kb kb 14mm mm 110mA mA 8b b
Price: 0.0000
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